|
|
PDF MPQ6427 Data sheet ( Hoja de datos )
| Número de pieza | MPQ6427 | |
| Descripción | QUAD DARLINGTON TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MPQ6427 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
|
No Preview Available !
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
MPQ6426
MPQ6427
vCEO
30
40
Vdc
Collector-Base Voltage
MPQ6426
MPQ6427
vCBO
40
50
Vdc
Emitter-Base Voltage
—Collector Current Continuous
Vebo
•c
12 Vdc
500 mAdc
Four Die
Each Die Equal Power
Total Device Dissipation
@Ta = 25°C(1)
Derate above 25X
PD
500
4.0
900 mW
7.2 mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Pd
TJ- Tstg
825 2400
6.7 19.2
- 55 to + 1 50
mW
mW/°C
°C
(1) Second Breakdown occurs at power levels greater than 3 times the power
dissipation rating.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance
Each Die
Effective, 4 Die
Coupling Factors
Q1-Q4 or Q2-Q3
Q1-Q2orQ3-Q4
Junction to
Case
151
52
34
2.0
Junction to
Ambient
250
139
70
26
Unit
°C/W
°C/W
%
%
MPQ6426
MPQ6427
CASE 646-05, STYLE 1
TO-116
QUAD
DARLINGTON TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2)
dC = 10 mAdc, Bl = 0)
MPQ6426
MPQ6427
Collector-Base Breakdown Voltage
dC = 100 juAdc, El = 0)
MPQ6426
MPQ6427
Emitter-Base Breakdown Voltage
(IE = 10 /iAdc, lc = 0)
Collector Cutoff Current
(Vcb = 30 Vdc, El = 0)
Emitter Cutoff Current
(Vbe = 10 Vdc, cl = 0)
ON CHARACTERISTICS^)
DC Current Gain
dC = 10 mAdc, Vce = 5-0 Vdc)
«C = 100 mAdc, Vce = 5.0 Vdc)
Collector-Emitter Saturation Voltage
dC = 100 mAdc, Ib = 0.1 mAdc)
Base-Emitter On Voltage
dC = 100 mAdc, Vce = 5.0 Vdc)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
dC
=
10 mAdc, Vce
=
50
vdc
-
f
=
1°° MHz>
Output Capacitance
(Vcb = 10 V^c. IE = 0, f = 100 kHz)
Input Capacitance
(V B e = °-5 Vdc, cl = 0, f = 100 kHz)
(2) Pulse Test: Pulse Width « 300 /*s. Duty Cycle « 2.0%.
Symbol
v (BR)CEO
V(BR)CBO
V(BR)EBO
!CBO
!eBO
Min
30
40
40
50
12
—
—
Max
-
-
—
100
100
hFE
v CE(sat)
VBE(on)
5000
10,000
—
—
fT
Cobo
Cjbo
125
—
—
-
1.5
2.0
-
8.0
15
Unit
Vdc
Vdc
Vdc
nAdc
nAdc
—
Vdc
Vdc
MHz
pF
pF
5-123
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MPQ6427.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MPQ6426 | Quad Darlington Transistor | Motorola Semiconductors |
| MPQ6427 | NPN Darlington Transistor |  National Semiconductor |
| MPQ6427 | QUAD DARLINGTON TRANSISTOR | Motorola Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |