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PDF MMBV3401LT1 Data sheet ( Hoja de datos )
| Número de pieza | MMBV3401LT1 | |
| Descripción | Silicon Pin Diode | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Pin Diode
This device is designed primarily for VHF band switching applications but is also
suitable for use in general–purpose switching circuits. Supplied in a Surface Mount
package.
• Rugged PIN Structure Coupled with Wirebond Construction
for Optimum Reliability
• Low Capacitance 0.7 pF Typ at VR = 20 Vdc
• Very Low Series Resistance at 100 MHz 0.34 Ohms (Typ)
@ IF = 10 mAdc
3
Cathode
1
Anode
MMBV3401LT1
Motorola Preferred Device
SILICON PIN
SWITCHING DIODE
3
1
2
CASE 318 – 08, STYLE 8
SOT– 23 (TO – 236AB)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
Forward Power Dissipation @ TA = 25°C
Derate above 25°C
VR
PD
20 Vdc
200 mW
2.0 mW/°C
Junction Temperature
Storage Temperature Range
DEVICE MARKING
TJ
+125
°C
Tstg –55 to +150 °C
MMBV3401LT1 = 4D
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Reverse Breakdown Voltage
(IR = 10 µAdc)
Diode Capacitance
(VR = 20 Vdc)
Series Resistance (Figure 5)
(IF = 10 mAdc, f = 100 MHz)
Reverse Leakage Current
(VR = 25 Vdc)
V(BR)R
35
—
— Vdc
CT — — 1.0 pF
RS — — 0.7 Ω
IR — — 0.1 µAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
5–140
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MMBV3401LT1.PDF ] | |
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