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Número de pieza | MUN5330DW1T1 | |
Descripción | Dual Bias Resistor Transistors | |
Fabricantes | Motorola Semiconductors | |
Logotipo | ||
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SEMICONDUCTOR TECHNICAL DATA
Order this document
by MUN5311DW1T1/D
Dual Bias Resistor Transistors
NPN and PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a
monolithic bias network consisting of two resistors; a series base resistor and a
base–emitter resistor. These digital transistors are designed to replace a single
device and its external resistor bias network. The BRT eliminates these
individual components by integrating them into a single device. In the
MUN5311DW1T1 series, two complementary BRT devices are housed in the
SOT–363 package which is ideal for low power surface mount applications
where board space is at a premium.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Available in 8 mm, 7 inch/3000 Unit Tape and Reel.
MUN5311DW1T1
SERIES
Motorola Preferred Devices
65
4
123
CASE 419B–01, STYLE 1
SOT–363
(3) (2) (1)
R1
Q1
R2 R1
(4) (5)
R2
Q2
(6)
MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 and Q2, – minus sign for Q2 (PNP) omitted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
THERMAL CHARACTERISTICS
VCBO
50
Vdc
VCEO
50
Vdc
IC 100 mAdc
Thermal Resistance — Junction-to-Ambient (surface mounted)
RθJA
Operating and Storage Temperature Range
Total Package Dissipation @ TA = 25°C(1)
TJ, Tstg
PD
DEVICE MARKING AND RESISTOR VALUES: MUN5311DW1T1 SERIES
833
– 65 to +150
*150
°C/W
°C
mW
Device
Marking
R1 (K)
R2 (K)
MUN5311DW1T1
MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1(2)
MUN5316DW1T1(2)
MUN5330DW1T1(2)
MUN5331DW1T1(2)
MUN5332DW1T1(2)
MUN5333DW1T1(2)
MUN5334DW1T1(2)
MUN5335DW1T1(2)
11
12
13
14
15
16
30
31
32
33
34
35
10 10
22 22
47 47
10 47
10 ∞
4.7 ∞
1.0 1.0
2.2 2.2
4.7 4.7
4.7 47
22 47
2.2 47
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 3
©MMoototorroollaa, ISncm. 1a9l9l–7Signal Transistors, FETs and Diodes Device Data
1
1 page MUN5311DW1T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5311DW1T1 PNP TRANSISTOR
1
IC/IB = 10
1000
VCE = 10 V
TA = –25°C
0.1 100
25°C
75°C
TA = 75°C
25°C
–25°C
0.01
0
20 40
IC, COLLECTOR CURRENT (mA)
50
10
1
10
IC, COLLECTOR CURRENT (mA)
100
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
4 100 75°C 25°C
f = 1 MHz
3
lE = 0 V
TA = 25°C
10
TA = –25°C
1
2
0.1
1
0.01 VO = 5 V
0
0
10
20
30 40
50
0.001
0 1 2 3 4 5 6 7 8 9 10
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
Figure 9. Output Capacitance
Figure 10. Output Current versus Input
Voltage
100
VO = 0.2 V
10
1
TA = –25°C
25°C
75°C
0.1
0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
5 Page MUN5311DW1T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5314DW1T1 PNP TRANSISTOR
1
IC/IB = 10
0.1
0.01
TA = –25°C
75°C
25°C
0.001 0
20 40 60
IC, COLLECTOR CURRENT (mA)
Figure 37. VCE(sat) versus IC
80
180
160 VCE = 10 V
140
120
TA = 75°C
25°C
–25°C
100
80
60
40
20
0
1 2 4 6 8 10 15 20 40 50 60 70 80 90 100
IC, COLLECTOR CURRENT (mA)
Figure 38. DC Current Gain
4.5
4 f = 1 MHz
lE = 0 V
3.5 TA = 25°C
3
2.5
2
1.5
1
0.5
0
0 2 4 6 8 10 15 20 25 30 35 40 45 50
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 39. Output Capacitance
100
TA = 75°C
25°C
–25°C
10
VO = 5 V
1
0 2 4 6 8 10
Vin, INPUT VOLTAGE (VOLTS)
Figure 40. Output Current versus Input Voltage
10
VO = 0.2 V
75°C
1
25°C
TA = –25°C
0.1
0
10 20 30 40
IC, COLLECTOR CURRENT (mA)
50
Figure 41. Input Voltage versus Output Current
Motorola Small–Signal Transistors, FETs and Diodes Device Data
11
11 Page |
Páginas | Total 16 Páginas | |
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Número de pieza | Descripción | Fabricantes |
MUN5330DW1T1 | Dual Bias Resistor Transistors | Motorola Semiconductors |
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