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Número de pieza | MMBF0201NLT1 | |
Descripción | TMOS Single N-Channel FET | |
Fabricantes | Motorola Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MMBF0201NLT1 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
™
MMBF0201NLT1
Low rDS(on) Small-Signal MOSFETs
Motorola Preferred Device
TMOS Single N-Channel
Field Effect Transistors
Part of the GreenLine™ Portfolio of devices with energy–con-
serving traits.
These miniature surface mount MOSFETs utilize Motorola’s
High Cell Density, HDTMOS process. Low rDS(on) assures
minimal power loss and conserves energy, making this device
ideal for use in small power management circuitry. Typical
applications are dc–dc converters, power management in
portable and battery–powered products such as computers,
printers, PCMCIA cards, cellular and cordless telephones.
• Low rDS(on) Provides Higher Efficiency and Extends Battery
Life
1
GATE
• Miniature SOT–23 Surface Mount Package Saves Board Space
™
3 DRAIN
2 SOURCE
N–CHANNEL
ENHANCEMENT–MODE
TMOS MOSFET
rDS(on) = 1.0 OHM
3
1
2
CASE 318–08, Style 21
SOT–23 (TO–236AB)
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Drain–to–Source Voltage
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 70°C
Drain Current — Pulsed Drain Current (tp ≤ 10 µs)
Total Power Dissipation @ TA = 25°C(1)
Operating and Storage Temperature Range
Thermal Resistance — Junction–to–Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
DEVICE MARKING
N1
(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
Device
MMBF0201NLT1
MMBF0201NLT3
ORDERING INFORMATION
Reel Size
Tape Width
7″ 12 mm embossed tape
13″ 12 mm embossed tape
Quantity
3000
10,000
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Symbol
VDSS
VGS
ID
ID
IDM
PD
TJ, Tstg
RθJA
TL
Value
20
± 20
300
240
750
225
– 55 to 150
556
260
Unit
Vdc
Vdc
mAdc
mW
°C
°C/W
°C
4–61
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet MMBF0201NLT1.PDF ] |
Número de pieza | Descripción | Fabricantes |
MMBF0201NLT1 | TMOS Single N-Channel FET | Motorola Semiconductors |
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MMBF0201NLT1G | Power MOSFET ( Transistor ) | ON Semiconductor |
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