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PDF BSS138LT1 Data sheet ( Hoja de datos )
| Número de pieza | BSS138LT1 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | WILLAS | |
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Hay una vista previa y un enlace de descarga de BSS138LT1 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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WILLAS
FM120-M+
BSS8LTT1HRU
P1.o0AwSeUrRFMACOESMFOEUNTT S2C0H0OTmTKBAYARmRpIEsR,R5EC0TIVFIoERltSs-20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
SOD-123H
optimize board space.
N–•CLohwaponwner eloslsS, hiOghTeff–ic2ien3cy.
• High current capability, low forward voltage drop.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
Typi•caHligahpspulricgaetcioanpsabailritey. dc–dc converters, power management in
porta• bGleuaardnrdingbafottreorvye–rpvoolwtaegreepdroptreocdtiuocnt.s such as computers, printers,
•PCM••CSUIilAltircacohanirgedhps-i,tsapcxeeiaelllduplsalawrniatacnrhdcinhcgipo. ,rmdleetsasl
telephones.
silicon junction.
Lo• wLeTahdr-ferseheopladrtVsomlteaegteen(VvirGoSn(tmh)e: n0t.a5lVs.t.a.1n.d5aVrd)smoaf kes
it
ideal
for
low
0.071(1.8)
0.056(1.4)
voltMaIgLe-SaTpDp-l1ic9a5t0io0n/s228
• M•inRHioaaHltouSgreepnroSfrdeOuecTtp–froo2rd3puacSct kufoirnrfgapaccocekdieMngsoucufofnidxet"GPsu"affcixka"Hg"e saves board space
• PMb-Fercehe apancikcaagledisaatvaailable
R•oEHpSoxpyro: UdLu9c4t -fVo0r rpaatecdkifnlagmceordeetarsduafnfitx ”G”
H•aCloagseen: Mfreoledepdropdlausctitc,foSrOpDa-c12k3inHg code suffix “H”
•
Terminals
:Plated
terminals,
solderable
per
,
MIL-STD-750
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
SOT –23
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
• Mounting Position : Any
• Weight : Approximated 0.011 gram
N - Channel
3
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current b1y 20%
MARKING DIAGRAM
& PIN ASSIGNMENT
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
2 12 13 14 15 16
18 10
115 120
VRRM
20
30
40
50
60
VRMS
14
21
28
35
42
J180 100
56 70
150 200 Volts
105 140 Volts
VDC 20 30 40 50 60
80 100 150 200 Volts
Maximum Average Forward Rectified Current
IO
MAXIMUM RATINGS (TA = 25oC unless othe rwise noted)
Peak Forward Surge Current 8.3 ms single half sine-wave IFSM
superimposed on rateRdalotaindg(JEDEC method)
TypDicraaliTnh–etorm–Saol RurecseisVtaonlctaeg(eNote 2)
Typical Junction Capacitance (Note 1)
OpeGraattieng–tToe–mSopeurracteurVeoRltaanggee– Continuous
Symbol
VDSRSCΘJJA
VGSTJ
Value
50
± 20
Unit
Vdc
-5V5dtco +125
1.0
J1 = Device Code
30 M = Month Code
40
1O20RDERING -55INtoF+O1R50MATION
Amps
Amps
℃/W
PF
℃
StorDargaeinTeCmurpreernatture Range
– Continuous @ TA = 25°C
– Pulsed DraCinHACRuArrCenTtE(RtpIS≤TI1C0Sµs)
TSTG
mA
D-e6v5icteo +175 Package
Shipping
℃
ID 200
IDSMYMBOL F8M01020-MH FM130-MH FM140-MH FM150-MBHSFSM113680L-MTH1FM180-SMOH TFM–213100-MH30F0M011T5a0p-MeH&FRM1e2e0l0-MH UNIT
MaxTimotuaml PFoowrwerarDdisVsoipltaagtieonat@1.0TAAD=C25°C
PD VF
MaxOimpuemratAinvgeraangde RSetovreargsee CTeumrrepnetraattur@e T A=25℃ TJ, TstgIR
RatedRDaCngBelocking Voltage
@T A=125℃
225
– 55 to
150
mW 0.50
°C
0.70
0.5
10
0.85
0.9 0.92 Volts
mAmps
NOTTEhSe: rmal Resistance – Junction–to–Ambient RθJA
556 °C/W
1- MMeaasxuirmedumat 1LeMaHdZTaenmd paeppralietudrerevfoersSeovlodletarginegof 4.0 VDTCL . 260 °C
2- TherPmuarlpRoesseisst,anfocre1F0rosmecJuonncdtison to Ambient
2012-06
2012-10
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
1 page  
WILLAS
P1.0oAwSUeRrFAMCEOMSOUFNETTSCH2O0TT0KYmBAARmRIEpRsR,EC5T0IFIEVRoSl-t20sV- 200V
SOD-123+ PACKAGE
FM120-M+
BSS8LTTH1RU
FM1200-M+
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to SOT-23
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
.122(3.10)
• Guardring for overvoltage protection.
• Ultra high-speed switching.
.106(2.70)
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
• Epoxy : UL94-V0 rated flame retardant
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
•
Terminals
:Plated
terminals,
solderable
per
,
MIL-STD-750
Method 2026
• Polarity : Indicated by catho.0de80ba(2nd.04)
• Mounting Position : Any .070(1.78)
0.031(0.8) Typ.
0.031(0.8) Typ.
.008(0.20)
.003(0.08)Dimensions in inches and (millimeters)
• Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derat.e0c0u4rr(e0nt.1by02)0M%AX.
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
12 13 14 15 16
18 10
115 120
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
80 100 150 200 Volts
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
Maximum DC Blocking Voltage
VD.C020(02.050) 30 40 50 60
80
Maximum Average Forward Rectified Current
IO.012(0.30)
1.0
Peak Forward Surge Current 8.3 ms single half sine-wave IFSM
30
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
Dimensions
RΘJA
CJ
TJ 0.037
in
inche s and
-55 to +125
(millimeters)
0.037
0.95
40
120
TSTG 0.95
- 65 to +175
70
100
-55 to +150
105
150
140
200
Volts
Volts
Amps
Amps
℃/W
PF
℃
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.9 0.92 Volts
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
NOTES:
@T A=125℃
IR
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
0.035
0.9
0.079
2.0
0.5
10
mAmps
2- Thermal Resistance From Junction to Ambient
0.031
0.8
inches
mm
2012-10
WILLAS ELECTRONIC CORP.
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet BSS138LT1.PDF ] | |
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