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PDF MMPQ2369 Data sheet ( Hoja de datos )
| Número de pieza | MMPQ2369 | |
| Descripción | Quad Switching Transistor | |
| Fabricantes | ON Semiconductor | |
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MMPQ2369
Quad Switching
Transistor
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current —
Continuous
VCEO
VCB
VEB
IC
15 Vdc
40 Vdc
4.5 Vdc
500 mAdc
Each
Transistor
Four
Transistors
Equal
Power
Total Power Dissipation
PD
@ TA = 25°C
0.4
Derate above 25°C
3.2
W
0.72
6.4 mW/°C
Total Power Dissipation
PD
@ TC = 25°C
0.66
Derate above 25°C
5.3
W
1.92
15.4 mW/°C
Operating and Storage
Junction Temperature
Range
TJ, Tstg
−55 to +150
°C
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector −Emitter
Breakdown Voltage(1)
(IC = 10 mAdc, IB = 0)
Collector −Base
Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter −Base
Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
V(BR)CEO
Vdc
15 — —
V(BR)CBO
Vdc
40 — —
V(BR)EBO
Vdc
4.5 —
—
ICBO
— — 0.4 mAdc
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
http://onsemi.com
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CASE 751B−05, STYLE 4
SO−16
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Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 2
1
Publication Order Number:
MMPQ2369/D
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MMPQ2369.PDF ] | |
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