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PDF MPQ6700 Data sheet ( Hoja de datos )
| Número de pieza | MPQ6700 | |
| Descripción | Quad Complementary Pair Transistor | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Quad Complementary Pair
Transistor
NPN/PNP Silicon
14 13 12 11 10 9 8
COMPLEMENTARY
1234567
TYPE B
MPQ6700
MPQ6502
For Specifications,
See MPQ6001 Data
MPQ6600A1
For Specifications,
See MPQ6100A Data
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
VCEO
VCBO
VEBO
IC
40
40
5.0
200
Each
Transistor
Four
Transistors
Equal Power
Vdc
Vdc
Vdc
mAdc
Total Device Dissipation
@ TA = 25°C(1)
Derate above 25°C
PD
500
4.0
900 mW
7.2 mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
825
6.7
2400
19.2
mW
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Junction to
Case
Junction to
Ambient
Unit
Thermal Resistance
Each Die
151 250 °C/W
Effective, 4 Die 52 139 °C/W
Coupling Factors
Q1–Q4 or Q2–Q3
Q1–Q2 or Q3–Q4
34
2.0
70 %
26 %
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2)
(IC = 10 mAdc, IB = 0)
V(BR)CEO
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
IEBO
v v1. Second Breakdown occurs at power levels greater than 3 times the power dissipation rating.
2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Voltage and current are
negative for PNP transistors
Motorola Preferred Device
14
1
CASE 646–06, STYLE 1
TO–116
TYPE B
Min Max Unit
Vdc
40 —
Vdc
40 —
Vdc
5.0 —
nAdc
— 50
nAdc
— 50
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2–509
1 page  
MPQ6700
500
TJ = 25°C
300 VCE = 20 V
f = 100 MHz
200
150
100
70
50
0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
20 30
Figure 13. Current–Gain — Bandwidth Product
700
TJ = 25°C
500 VCE = –20 V
f = 100 MHz
300
200
100
70
–0.3 –0.5 –0.7 –1.0
–2.0 –3.0 –5.0 –7.0 –10
IC, COLLECTOR CURRENT (mA)
–20 –30
Figure 14. Current–Gain — Bandwidth Product
7.0
5.0 TJ = 25°C
3.0
Cib
2.0
1.5
Cob
1.0
0.7
0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 6.0 10 20 40 60
VR, REVERSE VOLTAGE (VOLTS)
Figure 15. Capacitance
10
TJ = 25°C
7.0
5.0
Cib
3.0
2.0
Cob
1.0
–0.04
–0.1 –0.2 –0.4 –1.0 –2.0 –4.0 –10 –20
VR, REVERSE VOLTAGE (VOLTS)
–40
Figure 16. Capacitance
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2–513
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet MPQ6700.PDF ] | |
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