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PDF MRF402 Data sheet ( Hoja de datos )

Número de pieza MRF402
Descripción HIGH FREQUENCY TRANSISTOR
Fabricantes Motorola Semiconductors　
Logotipo Motorola Semiconductors Logotipo



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No Preview Available ! MRF402 Hoja de datos, Descripción, Manual

MRF402
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation T& = 25°C
Derate above 25°C
Storage Temperature
Symbol
VCEO
VCBO
v EBO
"C
PD
•
Tstg
Value
18
36
4.0
0.5
1.0
5.62
-65 to +200
Unit
Vdc
Vdc
Vdc
Adc
Watts
mW/°C
°C
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
HIGH FREQUENCY TRANSISTOR
NPN SILICON
ff
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
dC = 100 mAdc, Ib = 0)
Collector-Emitter Breakdown Voltage
dC = 100 mAdc, Vbe = 0)
Emitter-Base Breakdown Voltage
(lg = 0.25 mAdc, lc = 0)
Collector Cutoff Current
(Vcb = 15 Vdc, Ie = 0)
ON CHARACTERISTICS
DC Current Gain
dC = 250 mAdc, Vce = 5.0 Vdc)
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
(Vcb = is vdc, ie = o, f = i.o mhz)
FUNCTIONAL TEST (FIGURE 1)
Common-Emitter Amplifier Power Gain
(Vcc = 12-5 Vdc, Pout = 1.0 W, lc(max) = 160 mAdc, f = 50 MHz)
Collector Efficiency
(Vcc = 12.5 Vdc, P ut = 10 W, lc(max) = 160 mAdc, f = 50 MHz)
Symbol
v (BR)CEO
V (BR)CES
v (BR)EBO
ICBO
Min
18
36
4.0
—
hFE
Cqdo
5.0
—
G PE
V
10
50
Unit
- Vdc
— Vdc
— Vdc
0.5 mAdc
--
25 PF
- dB
—%
7-147

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