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PDF MRF931 Data sheet ( Hoja de datos )
| Número de pieza | MRF931 | |
| Descripción | HIGH FREQUENCY TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MRF931 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Peak
@Total Device Dissipation T/\ = 100°C
Derate above 100°C
Junction Temperature
Storage Temperature
Symbol
VCEO
VCBO
vEBO
ic
pd
Tj
T stq
Value
5.0
10
2.0
5.0
50
1.0
+ 150
-65 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
°c
°c
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Symbol
R 0JA
Max
500
Unit
°C/W
MRF931
CASE 317-01, STYLE 2
HIGH FREQUENCY TRANSISTOR
NPN SILICON
^r
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
c(l = 0.1 mAdc, Ib = 0)
Collector-Base Breakdown Voltage
(IC = 0.01 mAdc, l£ = 0)
Emitter-Base Breakdown Voltage
E(l = 0.1 mAdc, lc = 0)
Collector Cutoff Current
(Vcb = 5.0 Vdc, l£ = 0)
ON CHARACTERISTICS
DC Current Gain
c(l = 0.25 mAdc, Vce = 1-0 Vdc)
SMALL SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
E<I = 1.0 mAdc, Vce = 10 Vdc, f = 1.0 GHz)
Collector-Base Capacitance
(Vcb = 1 -o vdc, Ie = o, f = 1.0 MHz)
FUNCTIONAL TEST
Noise Figure
E(l = 0.25 mAdc, VC e = 1-0 Vdc, f = 0.5 GHz)
(IE = 0.25 mAdc, Vce = 1-0 Vdc, f = 1.0 GHz)
Power Gain at Optimum Noise Figure
E(l = 0.25 mAdc, Vce = 10 Vdc, f = 0.5 GHz)
(IE = 0.25 mAdc, Vce = 10 Vdc, f = 1.0 GHz)
Transducer Power Gain
E(l = 0.5 mAdc, Vce = 1 -0 Vdc, f = 0.5 GHz)
(IE = 0.5 mAdc, Vce = 10 Vdc, f = 1.0 GHz)
Symbol
V(BR)CEO
V(BR)CBO
v (BR)EBO
!CBO
"FE
h
Ccb
NF
Gnf
gt
5.0
10
2.0
—
30
—
—
-
-
-
Typ
Max
Unit
— — Vdc
— — Vdc
— — Vdc
— 50 nAdc
— 150 —
—3.0 GHz
0.35
0.5
PF
dB
-3.8
4.3
dB
-16
10
- dB
18
12
7-231
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MRF931.PDF ] | |
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