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PDF MRF581 Data sheet ( Hoja de datos )
| Número de pieza | MRF581 | |
| Descripción | HIGH FREQUENCY TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MRF580
MAXIMUM RATINGS
Rating
Symbol MRF581 MRF581
Unit
Collector-Emitter Voltage
vCEO
18
18 Vdc
Collector-Base Voltage
vCBO
36
36 Vdc
Emitter-Base Voltage
—Collector Current Continuous
vEBO
"C
2.5
200
2.5 Vdc
200 mAdc
Total Device Dissipation
@TC = 50°C(1)
Derate above Tq = 50°C
PD
2.5 2.5 Watts
25 25 mW/°C
Operating and Storage Junction
Temperature Range
TJ. Tstg
-65 to
+ 150
-65 to
+ 150
°C
(1) Case temperature measured on collector lead immediately adjacent to body of
package.
CASE 317A-01, STYLE 2
HIGH FREQUENCY TRANSISTOR
NPN SILICON
MRF581
CASE 317-01, STYLE 2
HIGH FREQUENCY TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage
OC = 1.0 mAdc, Bl = 0)
Collector-Base Breakdown Voltage
dC = 1.0 mAdc, El = 0)
Emitter-Base Breakdown Voltage
(IE = 0.10 mAdc, \q = 0)
Collector Cutoff Current
(VC b = 15 Vdc, El = 0)
Emitter Cutoff Current
(VCe = 2.0 Vdc, V BE
ON CHARACTERISTICS
DC Current Gain(1)
Op = 50 mAdc, Vqe
5.0 Vdc)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
OC = 75 mAdc, Vqe = 10 Vdc, f = 1.0 GHz)
Collector-Base Capacitance
(Vcb = 10 Vdc, Ie = 0, f = 1.0 MHz)
FUNCTIONAL TESTS
Noise Figure MRF580/581
OC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz)
Power Gain at Optimum Noise Figure MRF580
dC = 50 mAdc, Vqe = 10 Vdc, f = 0.5 GHz)
Power Gain at Optimum Noise Figure MRF581
OC = 50 mAdc, Vqe = 10 Vdc, f = 0.5 GHz)
Maximum Available Power Gain MRF580(2)
dC = 75 mAdc, VCE = 10 Vdc, f = 0.5 GHz)
Maximum Available Powei Gain MRF581(2)
dC = 75 mAdc, Vqe = 10 Vdc, f = 0.5 GHz)
Figure 18
Figure 18
Figure 18
Intermodulation Distortion MRF58K3)
(Vce = 10 V, lc = 75 mA, Vout = +50 dBmV)
Figure 16
(1) 300 us pulse on Tektronix 576 or equivalent.
(2) Characterized on HP8542 Automatic Network Analyzer.
(3) 2 Tones, f1 = 497 MHz, f2 = 503 MHz, 3rd Order Single Tone reference.
Symbol
v(BR)CEO
v (BR)CBO
v (BR)EBO
ICBO
'EBO
hFE
«T
Ccb
NF
Gnf
Gnf
Gmax
Gmax
IMD(d3)
Min
36
"2.5
-
-
-
11
13
—
—
—
Typ
5.0
1.4
2.0
14
15.5
15
17.5
-65
Max
100
100
Unit
[
Vdc
Vdc
Vdc
yuAdc
/xAdc
- GHz
2.0 PF
3.0 dB
- dB
- dB
- dB
- dB
— dB
7-187
1 page  
MRF580 • MRF581
MRF581 TYPICAL PERFORMANCE
— —FIGURE 10 Gu max MAXIMUM UNILATERAL GAIN,
2
IS21I
versus
FREQUENCY
—FIGURE 11 GA max, MAXIMUM AVAILABLE GAIN
versus FREQUENCY
_0 15
S 10
-c U max
IS21I 2
- -2|
2
|Sii! )(1
22iS )
!
s
2
IS 21
Vf E = 10 V
t = 7 5rr A
20
S 15
<^ 10
5.0
Ga max
' 2 1 ' IK +•
iv.2
1S12I
v
11 if
VCF = 1C V
'C =- 75 nnA
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
f, FREQUENCY (GHz)
—FIGURE 12 NOISE FIGURE AND GAIN ASSOCIATED
WITH NOISE FIGURE versus FREQUENCY
_
g 20
NF
NF vrr = 1C V
ic == 50 nnA
0.2 0.3
f, FREQUENCY (GHz)
0.5
—FIGURE 14 OUTPUT POWER versus INPUT POWER
f = 470 MHz
0.5 0.7
f, FREQUENCY (GHz)
1.0
—FIGURE 13 NOISE FIGURE AND GAIN ASSOCIATED WITH
NOISE FIGURE versus COLLECTOR CURRENT
- G NF
l"S = I'L =
z j = 50 !!
4„
3&
NF
VCE - lOVdc
2g
1
==
25 50 75
IC, COLLECTOR CURRENT ImA)
—FIGURE 15 OUTPUT POWER versus INPUT POWER
f = 870 MHz
1.2
0.9
0.6
Circu it per
0.3
Figu e 18
10 20 30 40 50 60 70
INPUT POWER (mW)
1.2
0.9
0.6
0.3
VCE1 2.5/1
7.5
Circuit per
*"
Figu e 18
100 150
INPUT POWER (mW)
7-191
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MRF581.PDF ] | |
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