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PDF BS2114F Data sheet ( Hoja de datos )
| Número de pieza | BS2114F | |
| Descripción | 600V High voltage High & Low-side Gate Driver | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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600V High voltage
High & Low-side, Gate Driver
BS2114F
General Description
The BS2114F is a monolithic high and low side gate drive
IC, which can drive high speed power MOSFET and IGBT
driver with bootstrap operation.
The floating channel can be used to drive an N-channel
power MOSFET or IGBT in the high side configuration
which operates up to 600V.
The logic inputs can be used 3.3V and 5.0V.
The Under Voltage Lockout (UVLO) circuit prevents
malfunction when VCC and VBS are lower than the
specified threshold voltage.
Features
Floating Channels for Bootstrap Operation to +600V
Gate drive supply range from 10V to 20V
Built-in Under Voltage Lockout for Both Channels
3.3V and 5.0V Input Logic Compatible
Output in phase with input
Applications
MOSFET and IGBT high side driver applications
Key Specifications
High-side floating supply voltage:
600V
Output voltage range:
10V to 20V
Min Output Current Io+/Io-:
500mA/500mA
Turn-on/off time:
250ns(Typ)
Dead time:
160ns(Typ)
Delay Matching:
50ns(Max)
Offset supply leakage current:
50µA (Max)
Operating temperature range: -40°C to +125°C
Package
SOP-8
W(Typ) x D(Typ) x H(Max)
5.00mm x 6.20mm x 1.71mm
Typical Application Circuits
VCC
LIN
HIN
LIN
HIN
VCC
COM
VB
HO
VS
LO
Up to 600V
TTOO
LLOORADD
Figure 1. Typical Application Circuit
〇Product structure : Silicon monolithic integrated circuit
.www.rohm.com
© 2017 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
〇This product has no designed protection against radioactive rays
1/19
TSZ02201-0252ABZ00070-1-2
26.Jan.2017 Rev.001
1 page  
BS2114F
DC Operation Electrical Characteristics
(Unless otherwise specified: Ta=25°C, VCC=15V,VBS=15V,VS=COM,CL=1000pF)
Parameter
VCC and VBS supply undervoltage
positive going threshold
VCC and VBS supply undervoltage
negative going threshold
VCC and VBS supply undervoltage
lockout hysteresis
Offset supply leakage current
Symbol
VCCUV+
VBSUV+
VCCUV-
VBSUV-
VCCUVH
VBSUVH
ILK
Min
8
7.4
0.3
-
Limits
Typ
8.9
8.2
0.7
-
Max
9.8
9
-
50
Quiescent VBS supply current
IQBS
20
60 150
Quiescent VCC supply current
IQCC 50 120 240
Logic “1” input voltage
VIH 2.6
-
-
Logic “0” input voltage
VIL -
- 0.8
High level output voltage, VCC (VBS) - VO
VOH
-
- 0.5
Low level output voltage, VO
VOL -
- 0.5
Logic “1” input bias current
IIN+ - 50 80
Logic “0” input bias current
IIN- - 1.0 2.0
Output high short circuit pulse current IO+ - 500 -
Output low short circuit pulsed current
IO-
- 500 -
AC Operation Electrical Characteristics
(Unless otherwise specified: Ta=25°C, VCC=15V,VBS=15V,VS=COM,CL=1000pF)
Parameter
Turn-on propagation delay
Symbol
ton
Min
150
Limits
Typ
250
Max
370
Turn-off propagation delay
toff 150 250 370
Turn-on rise time
tr - 30 70
Turn-off fall time
tf - 30 70
Dead time
DT 80 160 240
Delay matching, HS & LS turn-on/off
MT -
- 50
Unit Conditions
V
VB = VS = 600V
µA VIN = 0V or 5V
VIN = 0V or 5V
V
IO = 20mA
VIN = 5V
µA
VIN = 0V
VO = 0V
Pulse Width≤10µs
mA
VO = 15V
Pulse Width≤10µs
Unit Conditions
VS = 0V
VS = 0V or 600V
ns
www.rohm.com
© 2017 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
5/19
TSZ02201-0252ABZ00070-1-2
26.Jan.2017 Rev.001
5 Page 
BS2114F
Timing Chart
HIN
LIN
HO
LO
Internal Deadtime
Figure 24. Timing Chart
50%
HIN
LIN
ton
tr
50%
toff t f
90%
HO
LO 10%
90%
10%
HIN
50%
LIN
50%
LO
HO
90%
10%
DT
90%
DT
Figure 25. Detail Timeing Chart
10%
www.rohm.com
© 2017 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
11/19
TSZ02201-0252ABZ00070-1-2
26.Jan.2017 Rev.001
11 Page | ||
| Páginas | Total 22 Páginas | |
| PDF Descargar | [ Datasheet BS2114F.PDF ] | |
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