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PDF ESD5445D Data sheet ( Hoja de datos )
| Número de pieza | ESD5445D | |
| Descripción | Small Power TVS | |
| Fabricantes | WillSEMI | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de ESD5445D (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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ESD5445D
ESD5445D
4-Lines, Uni-directional, Low Capacitance
Transient Voltage Suppressors
http//:www.sh-willsemi.com
Descriptions
The ESD5445D is a low capacitance TVS (Transient Voltage
Suppressor) array designed to protect high speed data
interfaces. It has been specifically designed to protect
sensitive electronic components which are connected to data
and transmission lines from over-stress caused by ESD
(Electrostatic Discharge).
The ESD5445D incorporates four pairs of low capacitance
steering diodes plus a TVS diode.
The ESD5445D may be used to provide ESD protection up to
±30kV (contact discharge) according to IEC61000-4-2, and
withstand peak pulse current up to 25A (8/20μs) according to
IEC61000-4-5.
The ESD5445D is available in DFN2.6×2.6-10L package.
Standard products are Pb-free and Halogen-free.
DFN2.6×2.6-10L (Bottom View)
NC I/O4 NC I/O3 NC
10 9 8 7 6
GND
12345
I/O1 NC I/O2 NC VDD
Features
Circuit diagram
Reverse stand-off voltage: 3.3V max. (VDD to GND)
Transient protection for each line according to
10 6
IEC61000-4-2 (ESD): ±30kV (contact discharge)
IEC61000-4-5 (surge): 30A (8/20μs, Any I/O to GND)
60A (8/20μs, VDD to GND)
5445
DAYW
Low capacitance: CI/O - GND =3.0pF typ.
Low leakage current: IR <100nA typ.
Low clamping voltage: VCL I/O - GND = 7.6V @ IPP = 16A
(TLP)
15
Solid-state silicon technology
5445 = Device code
DA =Special code
Applications
YW = Date code
USB 2.0
Marking & Pin configuration (Top View)
Video Graphics Cards
DVI
Order information
IEEE 1394
Monitors and Flat Panel Displays
10/100 Ethernet
Device
Package
Shipping
ESD5445D-10/TR DFN2.6×2.6-10L 3000/Tape&Reel
Notebooks
Will Semiconductor Ltd.
1 Revision 1.0, 2016/08/04
1 page  
Typical characteristics (TA = 25oC, unless otherwise noted
ESD5445D
ESD clamping - I/O to GND
(+8kV contact discharge per IEC61000-4-2)
ESD clamping - I/O to GND
(-8kV contact discharge per IEC61000-4-2)
ESD clamping - VDD to GND
(+8kV contact discharge per IEC61000-4-2)
20
18
16
14
12
10
I/O~GND
8
6
Z = 50
0
4
t = 2ns
r
2
t = 100ns
p
0
-2
0123456789
TLP voltage (V)
TLP Measurement - I/O to GND
ESD clamping - VDD to GND
(-8kV contact discharge per IEC61000-4-2)
20
18
16
14
12
10 VDD~GND
8
6
4 Z = 50
0
2 t = 2ns
r
0 t = 100ns
p
-2
0123456
TLP voltage (V)
TLP Measurement - VDD to GND
Will Semiconductor Ltd.
5 Revision 1.0, 2016/08/04
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet ESD5445D.PDF ] | |
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