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PDF STK5MFU3C1A-E Data sheet ( Hoja de datos )
| Número de pieza | STK5MFU3C1A-E | |
| Descripción | 2-in-1 PFC and Inverter Intelligent Power Module | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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STK5MFU3C1A-E
2-in-1 PFC and Inverter Intelligent
Power Module (IPM), 600 V, 30 A
The STK5MFU3C1A-E is a fully-integrated PFC and inverter power
stage consisting of a high-voltage driver, six motor drive IGBT’s, one
PFC IGBT, one PFC rectifier and a thermistor, suitable for driving
permanent magnet synchronous (PMSM) motors, brushless-DC (BLDC)
motors and AC asynchronous motors.
The IGBT’s are configured in a 3-phase bridge with common emitter
connections for the lower legs.
An internal comparator and reference connected to the over-current
protection circuit allows the designer to set individual over-current
protection levels for the PFC and the inverter stages. Additionally, the
power stage has a full range of protection functions including cross-
conduction protection, external shutdown and under-voltage lockout
functions.
www.onsemi.com
PACKAGE PICTURE
Features
Simple thermal design with PFC and inverter stage in one package.
PFC operating frequency up to 40 kHz
Cross-conduction protection
Adjustable over-current protection level
Integrated bootstrap diodes and resistors
SIP28 78x31.1
MARKING DIAGRAM
Certification
UL1557 (File Number : E339285)
Typical Applications
Heat Pumps
Home Appliances
Industrial Fans
Industrial Pumps
HINU
LINU
HINV
LINV
HINW
LINW
PFCIN
GND
Three channel
half-bridge
driver
+
single-ended
PFC driver
with
protection
circuits
HS1
LS1
HS2
LS2
HS3
LS3
HS1
HS2
HS3
LS1 LS2 LS3
STK5MFU3C1A
ABCDD
3 6 9 12
16 18 20 22 24 26 28
1 4 7 10 13 15 17 19 21 23 25 27
STK5MFU3C1A = Specific Device Code
A = Year
B = Month
C = Production Site
DD = Factory Lot Code
Device marking is on package top side
ORDERING INFORMATION
Device
STK5MFU3C1A-E
Package
SIP28 78x31.1
(Pb-Free)
Shipping
(Qty / Packing)
280 / Box
Figure 1. Functional Diagram
© Semiconductor Components Industries, LLC, 2016
December 2016 - Rev. 1
1
Publication Order Number :
STK5MFU3C1A-E/D
1 page  
STK5MFU3C1A-E
ABSOLUTE MAXIMUM RATINGS at Tc = 25°C (Notes 1, 2)
Rating
Symbol
Conditions
Value
Unit
PFC Section
Collector-emitter voltage
VCE
PFCL to HVGND
600 V
PFC
IGBT
Repetitive peak collector current
Collector current
ICP
IC
Duty cycle 10%, pulse width 1ms
Tc = 100C
150 A
53 A
26 A
Maximum power dissipation
PC
96 W
Diode reverse voltage
VRM
VP1 to PFCL
600 V
PFC
Diode
Repetitive peak forward current
Diode forward current
IFP1
IF1
Duty cycle 10%, pulse width 1ms
Tc = 100C
90 A
30 A
18 A
Maximum power dissipation
PD1
65 W
Anti-
parallel
Diode
Repetitive peak forward current
Diode forward current
Maximum power dissipation
IFP2
IF2
PD2
Duty cycle 10%, pulse width 1ms
11 A
3A
5W
Maximum AC input voltage
VAC
Single-phase Full-rectified
264 V
Maximum output voltage
Input AC current (steady state)
Vo In the Application Circuit
Iin (VAC = 200 V)
450 V
33 Arms
Inverter Section
Supply voltage
Collector-emitter voltage
VCC
VCE max
VP2 to N surge < 500 V
(Note 3)
VP2 to U, V, W or U, V, W to N
450 V
600 V
Output current
Output peak current
Maximum power dissipation
VP2, U, V, W, N terminal current
±30 A
Io
VP2, U, V, W, N terminal current
at Tc = 100C
±15 A
Iop
VP, U, V, W, N terminal current, pulse
width 1 ms
±60
A
Pd IGBT per 1 channel
65 W
Gate driver section
Gate driver supply voltage
Input signal voltage
FAULT terminal voltage
VBS
VIN
VFAULT
VBU to U, VBV to V, VBW to W, VDD
to GND (Note 4)
HINU, HINV, HINW, LINU, LINV,
LINW, PFCIN
FAULT terminal
0.3 to +20.0
0.3 to VDD
0.3 to VDD
V
V
V
ITRIP terminal voltage
VITRIP
ITRIP terminal
0.3 to +10.0
V
PFCTRIP terminal voltage
VPTRIP
PTRIP terminal
1.5 to 2.0
V
Intelligent Power Module
Junction temperature
Tj IGBT, FRD, Gate driver IC
150 C
Storage temperature
Tstg
40 to +125
C
Operating case temperature
Tc IPM case temperature
20 to +100
C
Tightening torque
MT Case mounting screws
1.17 Nm
Isolation voltage
Vis
50 Hz sine wave AC 1 minute
(Note 5)
2000
Vrms
1. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device
functionality should not be assumed, damage may occur and reliability may be affected.
2. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for
Safe Operating parameters.
3. This surge voltage developed by the switching operation due to the wiring inductance between VP2 and N terminal.
4. VBS = VBU to U, VBV to V, VBW to W
5. Test conditions : AC 2500 V, 1 second
www.onsemi.com
5
5 Page 
APPLICATIONS INFORMATION
Input / Output Timing Chart
STK5MFU3C1A-E
Figure 18. Input / Output Timing Chart
Notes
9. This section of the timing diagram shows the effect of cross-conduction prevention.
10. This section of the timing diagram shows that when the voltage on VDD decreases sufficiently all gate output signals will go low,
switching off all six IGBTs. When the voltage on VDD rises sufficiently, normal operation will resume.
11. This section shows that when the bootstrap voltage on VBU (VBV, VBW) drops, the corresponding high side output U (V, W) is
switched off. When the voltage on VBU (VBV, VBW) rises sufficiently, normal operation will resume.
12. This section shows that when the voltage on ITRIP exceeds the threshold, all IGBT’s are turned off. Normal operation resumes
later after the over-current condition is removed. Similarly, when the voltage on PTRIP exceeds the threshold, all IGBT’s are
turned off. Normal operation resumes later after the over-current condition is removed
Input / Output Logic Table
INPUT
HIN
H
L
L
H
X
X
LIN
L
H
L
H
X
X
ITRIP
L
L
L
L
H
X
PTRIP
L
L
L
L
X
H
OUTPUT
High side IGBT
ON
OFF
OFF
OFF
OFF
OFF
Low side IGBT
OFF
ON
OFF
OFF
OFF
OFF
U,V,W
VP
N
High Impedance
High Impedance
High Impedance
High Impedance
FAULT
OFF
OFF
OFF
OFF
ON
ON
www.onsemi.com
11
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