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PDF STK541UC62K-E Data sheet ( Hoja de datos )
| Número de pieza | STK541UC62K-E | |
| Descripción | Intelligent Power Module | |
| Fabricantes | ON Semiconductor | |
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STK541UC62K-E
Intelligent Power Module (IPM)
600 V, 10 A
Overview
This “Inverter IPM” is highly integrated device containing all High Voltage
(HV) control from HV-DC to 3-phase outputs in a single SIP module
(Single-In line Package). Output stage uses IGBT/FRD technology and
implements Under Voltage Protection (UVP) and Over Current Protection
(OCP) with a Fault Detection output flag. Internal Boost diodes are provided
for high side gate boost drive.
www.onsemi.com
Function
Single control power supply due to Internal bootstrap circuit for high side
pre-driver circuit
All control input and status output are at low voltage levels directly
compatible with microcontrollers
Built-in cross conduction prevention
Externally accessible embedded thermistor for substrate temperature
measurement
Certification
UL1557 (File Number : E339285)
Specifications
Absolute Maximum Ratings at Tc = 25C
Parameter
Symbol
Conditions
Ratings
Supply voltage
Collector-emitter voltage
VCC
VCE
P to N, surge < 500 V
P to U, V, W or U, V, W to N
*1 450
600
Output current
P, N, U, V, W terminal current
Io
P, N, U, V, W terminal current at Tc = 100C
±10
±5
Output peak current
Iop P, N, U, V, W terminal current for a Pulse width of 1 ms.
±20
Pre-driver voltage
VD1, 2, 3, 4 VB1 to U, VB2 to V, VB3 to W, VDD to VSS
*2 20
Input signal voltage
VIN HIN1, 2, 3, LIN1, 2, 3
0.3 to 7
FLTEN terminal voltage
VFLTEN
FLTEN terminal
0.3 to VDD
Maximum power dissipation Pd IGBT per channel
22
Junction temperature
Tj IGBT, FRD
150
Storage temperature
Operating substrate
temperature
Tightening torque
Tstg
Tc IPM case temperature
Case mounting screws
40 to +125
40 to +100
*3 0.9
Isolation voltage
Vis 50 Hz sine wave AC 1 minute
*4 2000
Reference voltage is “VSS” terminal voltage unless otherwise specified.
*1 : Surge voltage developed by the switching operation due to the wiring inductance between “P” and “N” terminal.
*2 : Terminal voltage: VD1 = VB1 to U, VD2 = VB2 to V, VD3 = VB3 to W, VD4 = VDD to VSS
*3 : Flatness of the heat-sink should be 0.15 mm and below.
*4 : Test conditions : AC 2500 V, 1 s.
Unit
V
V
A
A
A
V
V
V
W
C
C
C
Nm
VRMS
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 14 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
October 2016 - Rev. 1
1
Publication Order Number :
STK541UC62K-E/D
1 page  
STK541UC62K-E
Test Circuit
The tested phase U+ shows the upper side of the U phase and U shows the lower side of the U phase.
■ ICE / IR(BD)
U+ V+ W+ U- V- W-
M
10 10 10
8
5
2
N 8 5 2 12 12 12
U(BD)
V(BD)
W(BD)
M 741
N 23 23 23
VD3=15V
VD2=15V
VD1=15V
VD4=15V
1M
2
4
5
7
8
14
23 N
ICE
A
VCE
Fig.1
■ VCE(sat) (test by pulse)
U+ V+ W+ U- V- W-
M
10 10 10
8
5
2
N 8 5 2 12 12 12
m 15 16 17 18 19 20
VD3=15V
VD2=15V
VD1=15V
VD4=15V
1M
2
4
5
V Ic
7
VCE(SAT)
8
14
mN
23
Fig.2
■ VF (test by pulse)
U+ V+ W+ U- V- W-
M
10 10 10
8
5
2
N 8 5 2 12 12 12
■ ID
M
N
VD1 VD2 VD3
741
852
VD4
14
23
M
V VF
IF
N
Fig.3
ID
A
VD*
M
N
Fig.4
www.onsemi.com
5
5 Page 
STK541UC62K-E
The characteristic of PWM switching frequency
14
12
10
8
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20
PWM Switching Frequency (kHz)
Fig. 12 Maximum sinusoidal phase current as function of switching frequency
at Tc = 100℃, VCC = 400 V
www.onsemi.com
11
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| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet STK541UC62K-E.PDF ] | |
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