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PDF CBSL30 Data sheet ( Hoja de datos )
| Número de pieza | CBSL30 | |
| Descripción | NPN SILICON RF POWER TRANSISTOR | |
| Fabricantes | Advanced Semiconductor | |
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CBSL30
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .230 6L FLG
The ASI CBSL30 is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
.040x45° C
4X .025 R
A
B
.115
.430 D
E
.125
I
F
G
H
2XØ.130
MAXIMUM RATINGS
L
JK
IC
VCBO
VCEO
VEBO
PDISS
TJ
TSTG
θJC
7.5 A
48V
25 V
3.5 V
88 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
3.0 OC/W
DIM
A
B
C
D
E
F
G
H
I
J
K
L
MINIMUM
inches / mm
.355 / 9.02
.115 / 2.92
.075 / 1.91
.225 / 5.72
.090 / 2.29
.720 / 18.29
.970 / 24.64
.355 / 9.02
.004 / 0.10
.120 / 3.05
.160 / 4.06
.230 / 5.84
MAXIMUM
inches / mm
.365 / 9.27
.125 / 3.18
.085 / 2.16
.235 / 5.97
.110 / 2.79
.730 / 18.54
.980 / 24.89
.365 / 9.27
.006 / 0.15
.130 / 3.30
.180 / 4.57
.260 / 6.60
ORDER CODE: ASI10582
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCBO
IC = 100 mA
BVCER
IC = 40 mA
RBE = 150 Ω
BVCEO
IC = 40 mA
BVEBO
IE = 10 mA
ICBO
VCE = 24 V
hFE VCE = 20 V
IC = 2.0 A
MINIMUM TYPICAL MAXIMUM
48 55 ---
30 40 ---
25 28 ---
3.5 5.0
---
10 --- ---
15 40 100
COB VCB = 25 V
f = 1.0 MHz
50
PG
IMD3
VSWR1
VSWR2
OVD
VCE = 25 V
POUT = 30 W
ICQ = 150 mA
f1 = 860.0 MHz
f = 860 MHz
f2 = 860.1 MHz
VCE = 25 V
VCE = 25 V ± 20%
VSWR = 20:1
VSWR = 10:1
VCE = 25 V ± 20%
VSWR = 5:1
PIN = PIN (norm) +3 dB
VCE = 25 V
VCE = 25 V ± 20%
PIN (norm) = +5 Db
PIN (norm) = +3 dB
7.5 ---
-35
No Degradation in
Output Device
No Degradation in
Output Device
No Degradation in
Output Device
UNITS
V
V
V
mA
---
pF
dB
dBc
Typ.
Typ.
Typ.
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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