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PDF EMB03N03HR Data sheet ( Hoja de datos )
| Número de pieza | EMB03N03HR | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
3.0mΩ
ID 75A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB03N03HR
LIMITS
UNIT
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH, ID=58A, RG=25Ω
Repetitive Avalanche Energy2
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
±20
75
45
160
58
168
84
50
20
‐55 to 150
V
A
mJ
W
°C
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=40A, Rated VDS=30V N‐CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
350°C / W when mounted on a 1 in2 pad of 2 oz copper.
2.5
°C / W
50
2015/1/8
p.1
1 page  
G a te C h a rg e C h a ra c te ris tic s
12
ID= 3 0 A
10
8
6
VDS =5V
15V
10V
10 4
10 3
EMB03N03HR
C a p a c ita n c e C h a ra c te ris tic s
C is s
C o ss
C rss
4
10 2
2
0
0
20 40
60
Q g ,G a te C h a rg e ( n C )
M axim um Safe O perating Area
1000
100
R d s (o n )Lim it
10
1
00
1
μ s
0 μ s
1ms
DC1001m0sm s
1 VG S = 1 0 V
SIN G LE PULSE
R θ J C = 2 .5 °C /W
T c = 2 5 °C
0.1
0.1
1 10
V ,D rain‐Source Voltage( V )
100
f = 1 M H z
V GS= 0 V
0 5 10 15 20 25
V DS ‐D ra in ‐S o u rc e V o lta g e ( V )
30
SINGLE PULSE MAXIMUM POWER DISSIPATION
3000 SRθI N JC G= L2E. 5P° UC/LWSE
TC = 25° C
2500
2000
1500
1000
500
0 0.01
0.1 1 10 100
SINGLE PULSE TIME ( mSEC )
1000
1
Duty Cycle = 0.5
0.5
0.3
0.2
0.1
0.05
0.2
0.1
0.05
0.02
0.03
0.01
0.02
S in g le P u ls e
0.01
1 0‐2
1 0‐1
Transient Therm al Response Curve
N o te s:
DM
1.D uty Cycle,D =
t1
t2
2 .R θ J C = 2 .5 °C /W
3 .TJ ‐ T C = P * R θ J C (t)
4 .R θ J C (t )= r (t ) * Rθ JC
1 10
t 1 ,T im e ( m S E C )
100
1000
2015/1/8
p.5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet EMB03N03HR.PDF ] | |
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