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PDF SQJQ100E Data sheet ( Hoja de datos )

Número de pieza SQJQ100E
Descripción Automotive Dual N-Channel MOSFET
Fabricantes Vishay 
Logotipo Vishay Logotipo



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www.vishay.com
SQJQ100E
Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
PowerPAK® 8 x 8L Single
1
Top View
8.1 mm
D
1
2G
3S
4S
S
Bottom View
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Thin 1.9 mm height
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = 10 V
ID (A)
Configuration
Package
40
0.0015
200
Single
PowerPAK 8 x 8L
G
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
Gate-source voltage
Continuous drain current
Continuous source current (diode conduction)
Pulsed drain current b
Single pulse avalanche current
Single pulse avalanche energy
Maximum power dissipation
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d, e
TC = 25 °C a
TC = 125 °C
L = 0.1 mH
TC = 25 °C
TC = 125 °C
VDS
VGS
ID
IS
IDM
IAS
EAS
PD
TJ, Tstg
LIMIT
40
± 20
200
141
136
600
70
245
150
50
-55 to +175
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Junction-to-ambient
Junction-to-case (drain)
PCB mount c
RthJA
50
°C/W
RthJC
1
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 8 x 8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S17-0228-Rev. A, 13-Feb-17
1
Document Number: 71828
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SQJQ100E pdf
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
Axis Title IDM limited
10000
100 100 μs
ID limited
1 ms
1000
10 10 ms
Limited by RDS(on) (1)
100 ms, 1 s, 10 s, DC
1
BVDSS limited
100
0.1
TC = 25 °C
Single pulse
0.01 10
0.01 0.1 1 10 100 1000
VDS - Drain-to-Source Voltage (V)
(1) VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1 0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
SQJQ100E
Vishay Siliconix
100 1000
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10 100
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71828.
S17-0228-Rev. A, 13-Feb-17
5
Document Number: 71828
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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