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PDF SVF4N80D Data sheet ( Hoja de datos )
| Número de pieza | SVF4N80D | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Silan Microelectronics | |
| Logotipo |  |
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SVF4N80F/D_Datasheet
4A 800V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF4N80F/D is an N-channel enhancement mode power MOS
field effect transistor which is produced using Silan proprietary
F-CellTM structure VDMOS technology. The improved planar
stripe cell and the improved guard ring terminal have been
especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-
DC converters and H-bridge PWM motor drivers.
FEATURES
∗ 4A,800V,RDS(on(typ)=3.3Ω@VGS=10V
∗ Low gate charge
∗ Low Crss
∗ Fast switching
∗ Improved dv/dt capability
NOMENCLATURE
Silan VDMOS Code
of F-Cell process
Nominal current,using 1 or 2 digits:
Example:4 denotes 4A,
10 denotes 10A,
08 denotes 0.8A
N denotes N Channel
Package information.
Example: F:TO-220F;
D:TO-252.
Nominal Voltage,using 2 digits
Example: 60 denotes 600V,
65 denotes 650V.
Special Features indication, May be omitted.
Example: E denotes embeded ESD structure
ORDERING INFORMATION
Part No.
SVF4N80F
SVF4N80D
SVF4N80DTR
Package
TO-220F-3L
TO-252-2L
TO-252-2L
Marking
SVF4N80F
SVF4N80D
SVF4N80D
Material
Pb free
Pb free
Pb free
Packing
Tube
Tube
Tape&Reel
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV: 1.0
2011.09.16
Page 1 of 9
1 page  
SVF4N80F/D_Datasheet
TYPICAL CHARACTERISTICS (continued)
Figure 7. Breakdown Voltage Variation
1.2 vs. Temperature
1.1
1.0
0.9
0.8
-100
Notes:
1. VGS=0V
2. ID=250µA
-50 0 50 100 150 200
Junction Temperature – TJ(°C)
Figure 9-1. Max. Safe Operating
Area(SVF4N80F)
102
Operation in This Area
is Limited by RDS(ON)
101 100µs
1ms
100 10ms
DC
10-1
10-2
100
Notes:
1.TC=25°C
2.Tj=150°C
3.Single Pulse
101 102
Drain Source Voltage - VDS(V)
103
Figure 10. Maximum Drain Current vs.
Case Temperature
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
25 50 75 100 125 150
Case Temperature – TC(°C)
Figure 8. On-resistance Variation
3.0 vs. Temperature
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes:
1. VGS=10V
2. ID=2.0A
-50 0 50 100 150 200
Junction Temperature – TJ(°C)
Figure 9-2. Max. Safe Operating
Area(SVF4N80D)
102
Operation in This Area
is Limited by RDS(ON)
101 100µs
1ms
10ms
100 DC
10-1
10-2
100
Notes:
1.TC=25°C
2.Tj=150°C
3.Single Pulse
101 102
Drain Source Voltage - VDS(V)
103
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV: 1.0
2011.09.16
Page 5 of 9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SVF4N80D.PDF ] | |
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