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PDF ALD110914 Data sheet ( Hoja de datos )
| Número de pieza | ALD110914 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Advanced Linear Devices | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de ALD110914 (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
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ADVANCED
LINEAR
DEVICES, INC.
e TM
EPAD
ENA
®
B
L
E
D
ALD110814/ALD110914
QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD®
PRECISION MATCHED PAIR MOSFET ARRAY
VGS(th)= +1.40V
GENERAL DESCRIPTION
ALD110814/ALD110914 are high precision monolithic quad/dual enhance-
ment mode N-Channel MOSFETs matched at the factory using ALD’s
proven EPAD® CMOS technology. These devices are intended for low
voltage, small signal applications.
The ALD110814/ALD110914 MOSFETs are designed and built with ex-
ceptional device electrical characteristics matching. Since these devices
are on the same monolithic chip, they also exhibit excellent tempco track-
ing characteristics. Each device is versatile as a circuit element and is a
useful design component for a broad range of analog applications. They
are basic building blocks for current sources, differential amplifier input
stages, transmission gates, and multiplexer applications. For most appli-
cations, connect the V- and IC pins to the most negative voltage in the
system and the V+ pin to the most positive voltage. All other pins must
have voltages within these voltage limits at all times.
APPLICATIONS
• Precision current mirrors
• Precision current sources
• Voltage choppers
• Differential amplifier input stages
• Discrete voltage comparators
• Voltage bias circuits
• Sample and Hold circuits
• Analog inverters
• Level shifters
• Source followers and buffers
• Current multipliers
• Discrete analog multiplexers/matrices
• Discrete analog switches
The ALD110814/ALD110914 devices are built for minimum offset voltage
and differential thermal response, and they are designed for switching
and amplifying applications in +1.5V to +10V systems where low input
bias current, low input capacitance and fast switching speed are desired.
Since these are MOSFET devices, they feature very large (almost infinite)
current gain in a low frequency, or near DC, operating environment.
The ALD110814/ALD110914 are suitable for use in precision applications
which require very high current gain, beta, such as current mirrors and
current sources. The high input impedance and the high DC current gain
of the Field Effect Transistors result in extremely low current loss through
the control gate. The DC current gain is limited by the gate input leakage
current, which is specified at 30pA at room temperature. For example, DC
beta of the device at a drain current of 3mA and input leakage current of
30pA at 25°C is = 3mA/30pA = 100,000,000.
FEATURES
• Enhancement-mode (normally off)
• Standard Gate Threshold Voltages: +1.40V
• Matched MOSFET to MOSFET characteristics
• Tight lot to lot parametric control
• Parallel connection of MOSFETs to increase drain currents
• Low input capacitance
• VGS(th) match to 10mV
• High input impedance — 1012Ω typical
• Positive, zero, and negative VGS(th) temperature coefficient
• DC current gain >108
• Low input and output leakage currents
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))
Operating Temperature Range*
0°C to +70°C
0°C to +70°C
16-Pin
SOIC
Package
16-Pin
Plastic Dip
Package
8-Pin
SOIC
Package
8-Pin
Plastic Dip
Package
ALD110814SCL ALD110814PCL ALD110914SAL ALD110914PAL
PIN CONFIGURATION
ALD110814
IC*
GN1
DN1
S12
V-
DN4
GN4
IC*
V-
1
2
M1
3
4
5 V-
6 M4
7
8 V-
V-
16 IC*
M2
V+
15 GN2
14 DN2
13 V+
12 S34
M 3 11 DN3
10 GN3
V- 9 IC*
SCL, PCL PACKAGES
ALD110914
V-
IC* 1
V-
8 IC*
GN1 2
DN1 3
S12 4
M1 M2
V-
7 GN2
6 DN2
5 V-
SAL, PAL PACKAGES
*IC pins are internally connected.
Connect to V-
* Contact factory for industrial temp. range or user-specified threshold voltage values.
Rev 2.2 ©2014 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286
www.aldinc.com
1 page  
TYPICAL PERFORMANCE CHARACTERISTICS
OUTPUT CHARACTERISTICS
5
TA = +25°C
4
VGS-VGS(TH)=+5V
VGS-VGS(TH)=+4V
3
2
1
0
0
VGS-VGS(TH)=+3V
VGS-VGS(TH)=+2V
VGS-VGS(TH)=+1V
2 46 8
DRAIN-SOURCE ON VOLTAGE (V)
10
DRAIN-SOURCE ON RESISTANCE
vs. DRAIN-SOURCE ON CURRENT
2500
TA = 25°C
2000
1500
1000
VGS = VGS(TH) +4V
500
0
10
VGS = VGS(TH) +6V
100 1000
DRAIN-SOURCE ON CURRENT (µA)
10000
FORWARD TRANSFER CHARACTERISTICS
20
15
10
5
0
-4
TA = 25°C
VDS = +10V
VGS(TH) = -3.5V
VGS(TH) = -1.3V
VGS(TH) = -0.4V
VGS(TH) = 0.0V
VGS(TH) = +0.2V
VGS(TH) = +1.4V
VGS(TH) = +0.8V
-2 0
2
4
6
8
GATE-SOURCE VOLTAGE (V)
10
TRANSCONDUCTANCE vs.
AMBIENT TEMPERATURE
2.5
2.0
1.5
1.0
0.5
0
-50
-25 0
25 50 75 100
AMBIENT TEMPERATURE (°C)
125
SUBTHRESHOLD FORWARD TRANSFER
CHARACTERISTICS
100000
10000
TA = +25°C
VDS=+0.1V
VGS(TH)=0.0V
1000
100
VGS(TH)=-1.3V
10
1
0.1
0.01
VGS(TH)=-3.5V
VGS(TH)=+0.2V VGS(TH)=+0.8V
-4 -3 -2 -1 0 1 2
GATE-SOURCE VOLTAGE (V)
SUBTHRESHOLD FORWARD TRANSFER
CHARACTERISTICS
1000
100
VDS=0.1V
Slope~= 110mV/decade
10
1
0.1
0.01
VGS(th)
-0.5
VGS(th)
-0.4
VGS(th)
-0.3
VGS(th)
-0.2
VGS(th)
-0.1
GATE-SOURCE VOLTAGE (V)
VGS(th)
ALD110814/ALD110914
Advanced Linear Devices
5 of 11
5 Page 
PDIP-8 PACKAGE DRAWING
8 Pin Plastic DIP Package
E E1
D
S
b
b1
A2 A
A1 L
e
Dim
A
A1
A2
b
b1
c
D-8
E
E1
e
e1
L
S-8
ø
Millimeters
Min
3.81
Max
5.08
0.38
1.27
1.27
2.03
0.89
1.65
0.38
0.51
0.20
0.30
9.40
11.68
5.59
7.11
7.62
8.26
2.29
2.79
7.37
7.87
2.79
3.81
1.02
2.03
0° 15°
Inches
Min
0.105
Max
0.200
0.015
0.050
0.050
0.080
0.035
0.065
0.015
0.020
0.008
0.012
0.370
0.460
0.220
0.280
0.300
0.325
0.090
0.110
0.290
0.310
0.110
0.150
0.040
0.080
0° 15°
c
e1 ø
ALD110814/ALD110914
Advanced Linear Devices
11 of 11
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet ALD110914.PDF ] | |
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