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PDF ALD111933 Data sheet ( Hoja de datos )
| Número de pieza | ALD111933 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Advanced Linear Devices | |
| Logotipo |  |
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ADVANCED
LINEAR
DEVICES, INC.
DUAL N-CHANNEL ENHANCEMENT MODE EPAD®
MATCHED PAIR MOSFET ARRAY
e TM
EPAD
ENA
®
B
L
E
D
ALD111933
VGS(th)= +3.3V
GENERAL DESCRIPTION
ALD111933 are monolithic dual N-Channel MOSFETs matched at the
factory using ALD’s proven EPAD® CMOS technology. These devices are
intended for low voltage, small signal applications.
ALD111933 MOSFETs are designed and built with exceptional device
electrical characteristics matching. Since these devices are on the same
monolithic chip, they also exhibit excellent tempco tracking characteris-
tics. Each device is versatile as a circuit element and is a useful design
component for a broad range of analog applications. They are basic build-
ing blocks for current sources, differential amplifier input stages, transmis-
sion gates, and multiplexer applications. For most applications, connect
V- and N/C pins to the most negative voltage potential in the system. All
other pins must have voltages within these voltage limits.
The ALD111933 devices are built for minimum offset voltage and differen-
tial thermal response, and they are designed for switching and amplifying
applications in +3.0V to +10V systems where low input bias current, low
input capacitance and fast switching speed are desired. Since these are
MOSFET devices, they feature very large (almost infinite) current gain in
a low frequency, or near DC, operating environment.
The ALD111933 are suitable for use in precision applications which re-
quire very high current gain, beta, such as current mirrors and current
sources. The high input impedance and the high DC current gain of the
Field Effect Transistors result in extremely low current loss through the
control gate. The DC current gain is limited by the gate input leakage
current, which is specified at 30pA at room temperature. For example, DC
beta of the device at a drain current of 3mA and input leakage current of
30pA at 25°C is = 3mA/30pA = 100,000,000.
FEATURES
• Enhancement-mode (normally off)
• Standard Gate Threshold Voltages: +3.3V
• Matched MOSFET to MOSFET characteristics
• Tight lot to lot parametric control
• Parallel connection of MOSFETs to increase drain currents
• Low input capacitance
• VGS(th) match to 20mV
• High input impedance — 1012Ω typical
• Positive, zero, and negative VGS(th) temperature coefficient
• DC current gain >108
• Low input and output leakage currents
ORDERING INFORMATION (“L”suffix for lead free version)
Operating Temperature Range*
0°C to +70°C
8-Pin
Plastic Dip
Package
8-Pin
MSOP
Package
8-Pin
SOIC
Package
ALD111933PAL
ALD111933MAL ALD111933SAL
APPLICATIONS
• Precision current mirrors
• Precision current sources
• Voltage choppers
• Differential amplifier input stages
• Discrete voltage comparators
• Voltage bias circuits
• Sample and Hold circuits
• Analog inverters
• Level shifters
• Source followers and buffers
• Current multipliers
• Discrete analog multiplexers/matrices
• Discrete analog switches
• Low current voltage clamps
• Voltage detectors
• Capacitive probes
• Sensor interfaces
• Peak detectors
• Level shifters
• Multiple preset voltage hysteresis circuits
(with other VGS(th) EPAD MOSFETS)
• Energy harvesting circuits
• Zero standby power voltage monitors
PIN CONFIGURATION
N/C*
ALD111933
V-
1
GN1 2
DN1
SN1
3
4
V-
8 GN2
7 DN2
6 V-
5 SN2
MA, PA, SA PACKAGES
*N/C pin is internally connected.
Connect to V- to reduce noise
* Contact factory for industrial or military temp. ranges or user-specified threshold voltage values.
© 2006 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com
1 page | ||
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