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Número de pieza | SSM2030GM | |
Descripción | N- and P-channel Enhancement-mode Power MOSFET | |
Fabricantes | Silicon Standard | |
Logotipo | ||
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No Preview Available ! SSM2030GM
N- and P-channel Enhancement-mode Power MOSFETs
Simple drive requirement
Lower gate charge
Fast switching characteristics
Pb-free; RoHS compliant.
DESCRIPTION
D2
D2
D1 D2
D1 D1
D1
SO-8
G2
S2G2
G1 S2
S1
S1
G1
N-CH
P-CH
BV DSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
Advanced Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching, ruggedized
device design, low on-resistance and cost-effectiveness.
The SSM2030GM is in an SO-8 package, which is widely preferred
G1
for commercial and industrial surface mount applications. This device is
suitable for low voltage applications requiring complementary N and P MOSFETs.
D1
G2
S1
20V
30mΩ
6A
-20V
50mΩ
-5A
D2
S2
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VGS
I D @ TA=25°C
ID @ TA=70°C
IDM
PD @ TA=25°C
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1,2
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
THERMAL DATA
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient
Rating
N-channel P-channel
20 -20
±8 ±8
+6 -5
+4.8 -4
+20 -20
2.0
0.016
-55 to 150
-55 to 150
Max.
Value
62.5
Units
V
V
A
A
A
W
W/°C
°C
°C
Unit
°C/W
2/10/2005 Rev.2.01
www.SiliconStandard.com
1 of 11
1 page N-channel
8
7
6
5
4
3
2
1
0
25 50 75 100 125 150
T c , Case Temperature ( oC)
Fig 5. Maximum Drain Current vs.
Case Temperature
SSM2030GM
3
2
1
0
0 50 100 150
T c ,Case Temperature ( oC)
Fig 6. Typical Power Dissipation
100
1ms
10
10ms
1
T c=25 oC
Single Pulse
0.1
0.1
1 10
V DS (V)
100ms
10us
100
1
DUTY=0.5
0.2
0.1
0.01
0.1
0.05
0.02
0.01
SINGLE PULSE
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
0.001
0.0001
0.001
0.01 0.1
1
t , Pulse Width (s)
10
100 1000
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
2/10/2005 Rev.2.01
www.SiliconStandard.com
5 of 11
5 Page P-channel
SSM2030GM
RD
D
VDS
TO THE
OSCILLOSCOPE
RG G
0.5 x RATED VDS
-4.5 V
S
VGS
Fig 13. Switching Time Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 14. Switching Time Waveform
D
G
S
-1~-3mA
I
G
VDS
VGS
I
D
TO THE
OSCILLOSCOPE
0.3 x RATED VDS
VG
-4.5V
QGS
QG
QGD
Charge
Q
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
2/10/2005 Rev.2.01
www.SiliconStandard.com
11 of 11
11 Page |
Páginas | Total 11 Páginas | |
PDF Descargar | [ Datasheet SSM2030GM.PDF ] |
Número de pieza | Descripción | Fabricantes |
SSM2030GM | N- and P-channel Enhancement-mode Power MOSFET | Silicon Standard |
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