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Número de pieza | SSM1333GU | |
Descripción | P-channel Enhancement-mode Power MOSFET | |
Fabricantes | Silicon Standard | |
Logotipo | ||
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No Preview Available ! SSM1333GU
P-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS
R DS(ON)
ID
-20V
600mΩ
-550mA
Pb-free; RoHS-compliant SOT-323/SC-70
D
DESCRIPTION
The SSM1333GU acheives fast switching performance
with low gate charge without a complex drive circuit. It
is suitable for low voltage applications such as drivers,
high-side line and general load-switching circuits.
The SSM1333GU is supplied in an RoHS-compliant
SOT-323/SC-70 package, which is widely used for
low power commercial and industrial surface mount
applications.
SOT-323/SC-70
S
G
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VGS
ID
IDM
PD
TSTG
TJ
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current 3, T A = 25°C
Pulsed drain current 1,2
TA = 70°C
Total power dissipation 3, TA = 25°C
Linear derating factor
Storage temperature range
Operating junction temperature range
THERMAL CHARACTERISTICS
Symbol
RΘJA
Parameter
Maximum thermal resistance, junction-ambient3
Value
-20
± 12
-550
-440
-2.5
0.35
0.003
-55 to 150
-55 to 150
Value
360
Units
V
V
mA
mA
A
W
W/°C
°C
°C
Units
°C/W
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
3.Mounted on FR4 board, t < 10 sec.
11/26/2005 Rev.3.01
www.SiliconStandard.com
1 of 5
1 page PHYSICAL DIMENSIONS
SOT-23-3
PART MARKING
NDXX
SSM1333GU
SOT-23-3
SYMBOL MILLIMETERS
MIN. MAX.
A 0.89 1.45
A1 0 0.15
A2 0.70 1.30
b 0.30 0.50
c 0.08 0.25
D 2.65 3.10
E 2.10 3.00
E1 1.19 2.30
e 0.95BSC
e1 1.90BSC
L 0.30 0.60
L1 0.60REF
Θ 0° 8°
*Dimensions do not include mold protrusions.
PART NUMBER CODE: ND = SSM2310GN
XX = DATE/LOT CODE
For a detailed explanation of these
codes, please contact SSC directly.
PACKING: Moisture sensitivity level MSL3
3000 pcs in antistatic tape on a reel packed in a moisture barrier bag (MBB).
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
11/26/2005 Rev.3.01
www.SiliconStandard.com
5 of 5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet SSM1333GU.PDF ] |
Número de pieza | Descripción | Fabricantes |
SSM1333GU | P-channel Enhancement-mode Power MOSFET | Silicon Standard |
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