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PDF SSM9915J Data sheet ( Hoja de datos )
| Número de pieza | SSM9915J | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Silicon Standard | |
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Low on-resistance
Capable of 2.5V gate drive
Low drive current
Simple drive requirement
Description
D
G
S
Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
SSM9915H,J
N-CHANNEL ENHANCEMENT-MODE
POWER MOSFET
BV DSS
R DS(ON)
ID
20V
50mΩ
20A
GD S
TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=125℃
IDM
PD@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
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Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
GD
S
Rating
20
± 10
20
16
41
26
0.2
-55 to 150
-55 to 150
Max.
Max.
Value
4.8
110
TO-251(J)
Units
V
V
A
A
A
W
W/℃
℃
℃
Unit
℃/W
℃/W
DataShee
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SSM9915H,J
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16
I D =20A
14
12 V DS =12V
V DS =16V
10
V DS =20V
8
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
f=1.0MHz
1000
Ciss
Coss
100
Crss
10
1 5 9 13 17 21 25 29
V DS (V)
Fig 10. Typical Capacitance Characteristics
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100 1.2
10
T j =150 o C
1
T j =25 o C
0.95
0.7
0.1 0.45
0.01
0
0.4 0.8 1.2
V SD (V)
1.6
Fig 11. Forward Characteristic of
Reverse Diode
0.2
-50
0 50 100
T j , Junction Temperature ( o C )
150
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
DataShee
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