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Número de pieza | SSM6679M | |
Descripción | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Fabricantes | Silicon Standard | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SSM6679M (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! SSM6679M
P-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Simple drive requirement
Low on-resistance
Fast switching characteristics
Description
D
D
D
D
SO-8
G
SS
S
Advanced power MOSFETs from Silicon Standard provide
the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for commercial and industrial
surface-mount applications and is well suited for low voltage applications
such as DC/DC converters.
BVDSS
RDS(ON)
ID
-30V
9mΩ
-14A
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID @ TA=25°C
ID @ TA=100°C
IDM
PD @ TA=25°C
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Rating
-30
± 25
-14
-8.9
-50
2.5
0.02
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
Max.
Value
50
Unit
°C/W
Rev.2.02 4/06/2004
www.SiliconStandard.com
1 of 4
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet SSM6679M.PDF ] |
Número de pieza | Descripción | Fabricantes |
SSM6679GM | P-channel Enhancement-mode Power MOSFET | Silicon Standard |
SSM6679M | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | Silicon Standard |
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