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PDF SLP60R190SJ Data sheet ( Hoja de datos )
| Número de pieza | SLP60R190SJ | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Maple Semiconductor | |
| Logotipo |  |
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SLP60R190SJ / SLF60R190SJ
600V N-Channel MOSFET
CB-FET
General Description
This Power MOSFET is produced using Maple semi‘s
Advanced Super-Junction technology.
This advanced technology has been especially tailored
to minimize conduction loss, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode.
These devices are well suited for AC/DC power conversion
in switching mode operation for higher efficiency.
Features
- 20A, 600V, RDS(on) typ. = 0.16Ω@VGS = 10 V
- Low gate charge ( typical 70nC)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
D
GDS
TO-220
GDS
TO-220F
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25℃)
- Continuous (TC = 100℃)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25℃)
- Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
SLP60R190SJ SLF60R190SJ
600
20 20 *
10 10 *
62 62 *
±30
485
20
1
4.5
205 35
1.67
0.3
-55 to +150
300
* Drain current limited by maximum junction temperature.
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/℃
℃
℃
Thermal Characteristics
Symbol
RθJC
RθJS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
SLP60R190SJ
0.6
0.5
62
SLF60R190SJ
3.6
--
80
Units
℃/W
℃/W
℃/W
Maple Semiconductor CO., LTD
http://www.maplesemi.com
Rev. 00 March. 2013
1 page  
Typical Characteristics (Continued)
Figure 13. Transfer Characteristics
Figure 14. Gate Charge Characteristics
Figure 15. Avalanche Energy Characteristics
Figure 16. Breakdown Voltage Variation
vs Temperature
Figure 17. Capacitance Characteristics
Figure 18. On-Resistance Variation vs
Temperature
Maple Semiconductor CO., LTD
http://www.maplesemi.com
Rev. 00 March. 2013
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SLP60R190SJ.PDF ] | |
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