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PDF SLW60R070SJ Data sheet ( Hoja de datos )
| Número de pieza | SLW60R070SJ | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Maple Semiconductor | |
| Logotipo |  |
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General Description
This Power MOSFET is producFeeadtuurseisng Maple semi‘s
Advanced Super-Junction
This advanced technology
theacsh--nb7Lo.oe6wlAeo,gng5a0ytee0. Vsch,paRerDgcSe(oi(na)ttlyylppy. i=cat0al .5i2lΩo5@nrCeV)dGS
=
10
V
to minimize conduction loss, pr-oHvigihdreugsguedpneesrsior switching
performance, and withstand hig-- F1h0a0set%nswaevitracghlaiynngcpheutlessetedin the
avalanche and commutation m-oImdpero.ved dv/dt capability
These devices are well suited for AC/DC power conversion
SLW60R070SJ
600V N-Channel MOSFET
Features
-47A, 600V, RDS(on) typ.= 60mΩ@VGS = 10 V
- Low gate charge ( typical
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
170nC)
D
TO‐247
TO‐3P
G
S
Absolute Maximum Ratings
TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current
- Continuous (TC = 25℃)
- Continuous (TC = 100℃)
IDM Drain Current - Pulsed
(Note 1)
VGSS Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(Note 1)
EAR
Repetitive Avalanche Energ
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25℃)
- Derate above 25℃
TJ, TSTG Operating and Storage Temperature Range
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
*Drain current limited by maximum junction temperature.
SLW60R070SJ
600
47
29
140
±30
1135
9.3
1.72
50
391
3.13
-55 to +150
300
Thermal Characteristics
Symbol
Parameter
RθJC
RθJS
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
Maple Semiconductor CO.,LTD
http://www.maplesemi.com
Value
0.32
0.5
62
Rev 1.0 September 2015
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/℃
℃
℃
Unit
s
℃/W
℃/W
℃/W
Page1
1 page  
VGS=f(Qg), ID=23A pulsed
Figure9：Typ. gate charge
EAS=f(Tj); ID=9.3A; VDD=50 V
Figure10：Avalanche energ
IF=f(VSD); parameter: Tj
Figure11：Forward characteristics of reverse diode
VBR(DSS)=f(Tj); ID=0.25mA
Figure12：Drain-source breakdown voltage
Maple Semiconductor CO.,LTD
http://www.maplesemi.com
Rev 1.0 September 2015
Page5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SLW60R070SJ.PDF ] | |
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