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PDF SLU65R2K6SJ Data sheet ( Hoja de datos )

Número de pieza SLU65R2K6SJ
Descripción N-Channel MOSFET
Fabricantes Maple Semiconductor 
Logotipo Maple Semiconductor Logotipo



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SLD65R2K6SJ / SLU65R2K6SJ
650V N-Channel MOSFET
CB-FET
General Description
This Power MOSFET is produced using Maple semi‘s
Advanced Super-Junction technology.
This advanced technology has been especially tailored
to minimize conduction loss, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode.
These devices are well suited for AC/DC power conversion
in switching mode operation for higher efficiency.
Features
- 2.3A, 650V, RDS(on) typ. = 2.3Ω@VGS = 10 V
- Low gate charge ( typical 7nC)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
D
D
GS
D-PAK
GDS
I-PAK
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
SLD65R2K6SJ / SLU65R2K6SJ
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current - Continuous (TC = 25)
- Continuous (TC = 100)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25)
- Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
650
2.3*
1.4*
6.0* 
±30
15
1
6
4.5
25
0.2
-55 to +150
300
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
RθJC
RθJS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
SLD65R2K6SJ / SLU65R2K6SJ
5
0.5
62
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
Units
/W
/W
/W
Maple Semiconductor CO., LTD
http://www.maplesemi.com
Rev. 00 July. 2014

1 page




SLU65R2K6SJ pdf
Typical Characteristics
Figure 13: Avalanche energy
Figure 2: Transfer Characteristics @VDS=20V
Maple Semiconductor CO., LTD
http://www.maplesemi.com
Rev. 00 July. 2014

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