|
|
PDF SLP830UZ Data sheet ( Hoja de datos )
| Número de pieza | SLP830UZ | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Maple Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de SLP830UZ (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
SLP830UZ / SLF830UZ
550V N-Channel MOSFET
General Description
This Power MOSFET is produced using Maple semi‘s
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored
to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge topology.
Features
- 5.0A, 550V, RDS(on) typ. = 1.0Ω@VGS = 10V
- Low gate charge ( typical 16.3nC)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
GDS
TO-220
GDS
TO-220F
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25℃)
- Continuous (TC = 100℃)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25℃)
- Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
SLP830UZ
SLF830UZ
550
5.0 5.0*
3.0 3.0*
20 20*
±20
190
5.0
7.5
4.5
75 30
0.60 0.24
-55 to +150
300
VESD(G-S)
Gate Source ESD (HBM – C = 100pF, R = 1.5KΩ)
2500
Thermal Characteristics
Symbol
RθJC
RθJS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
SLP830UZ
1.67
0.5
62.5
SLF830UZ
4.17
--
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/℃
℃
℃
V
Units
℃/W
℃/W
℃/W
Maple Semiconductor CO., LTD
http://www.maplesemi.com
Rev. 01 November. 2015
1 page  
Typical Characteristics (Continued)
100 D=0.5
0.2
0.1
10-1 0.05
0.02
0.01
10-2
10-5
※ Notes :
1. Zθ JC(t) = 1.67 ℃/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * Zθ JC(t)
single pulse
PDM
t1
t2
10-4 10-3 10-2 10-1 100
t1, Square Wave Pulse Duration [sec]
101
Figure 11-1. Transient Thermal Response Curve For SLP830UZ
D=0.5
100 0.2
0.1
0.05
0.02
10-1 0.01
※ Notes :
1. Zθ JC(t) = 4.17 ℃/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * Zθ JC(t)
10-2
10-5
single pulse
PDM
t1
t2
10-4 10-3 10-2 10-1 100
t1, Square Wave Pulse Duration [sec]
101
Figure 11-2. Transient Thermal Response Curve For SLF830UZ
Maple Semiconductor CO., LTD
http://www.maplesemi.com
Rev. 01 November. 2015
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SLP830UZ.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SLP830UZ | N-Channel MOSFET | Maple Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |