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PDF SLF10N80CZ Data sheet ( Hoja de datos )
| Número de pieza | SLF10N80CZ | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Maple Semiconductor | |
| Logotipo |  |
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SLP10N80CZ / SLF10N80CZ
800V N-Channel MOSFET
General Description
This Power MOSFET is produced using Maple semi‘s
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge topology.
Features
- 10A, 800V, RDS(on)Typ. = 0.85Ω@VGS = 10 V
- Low gate charge ( typical 63 nC)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- ESD Improved capability
D
G
GDS
TO-220
GDS
TO-220F
Absolute Maximum Ratings TC = 25°C unless otherwise noted
S
Symbol
Parameter
SLP10N80CZ SLF10N80CZ
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current
- Continuous (TC = 25℃)
- Continuous (TC = 100℃)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25℃)
- Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
800
10 10*
6 6*
40
±25
350
10
27.5
4.5
275 42
2.2 0.34
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/℃
℃
℃
Thermal Characteristics
Symbol
RθJC
RθJS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
SLP10N80CZ
0.45
0.5
62.5
SLF10N80CZ
2.95
--
62.5
Units
℃/W
℃/W
℃/W
Maple Semiconductor CO., LTD
http://www.maplesemi.com
Rev. 00 October . 2014
1 page  
Typical Characteristics (Continued)
100
D=0.5
10-1 0.2
0.1
0.05
0.02
0.01
10-2
single pulse
∝ Notes :
1. ZヨJC(t) = 0.45 ∩ /W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZヨJC(t)
PDM
t1
t2
10-3
10-5
10-4
10-3
10-2
10-1
100
t1, Square Wave Pulse Duration [sec]
101
Figure 11-1. Transient Thermal Response Curve for SLP10N80CZ
101
D=0.5
100 0.2
0.1
0.05
0.02
10-1 0.01
single pulse
10-2
∝ Notes :
1. ZヨJC(t) = 2.95 ∩ /W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZヨJC(t)
PDM
t1
t2
10-5
10-4
10-3
10-2
10-1
100
101
t1, Square Wave Pulse Duration [sec]
Figure 11-2. Transient Thermal Response Curve for SLF10N80CZ
Maple Semiconductor CO., LTD
http://www.maplesemi.com
Rev. 00 October . 2014
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SLF10N80CZ.PDF ] | |
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