|
|
PDF MDU5693 Data sheet ( Hoja de datos )
| Número de pieza | MDU5693 | |
| Descripción | Dual N-Channel MOSFET | |
| Fabricantes | MagnaChip | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MDU5693 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
MDU5693
Dual Asymmetric N-channel Trench MOSFET 30V
General Description
The MDU5693 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDU5693 is suitable for DC/DC converter and
general purpose applications.
Features
FET1
FET2
VDS = 30V
ID = 52A
VDS = 30V
ID = 100A @VGS = 10V
RDS(ON)
< 5.0mΩ
< 8.5mΩ
< 2.5mΩ @VGS = 10V
< 3.2mΩ @VGS = 4.5V
100% UIL Tested
100% Rg Tested
1
2
3
4
S2
5
6
S2
S2
7 8 G2
S1/D2
4
D1 3
D1
2
D1
1
G1
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2)
TC=25oC (Silicon Limited)
TC=25oC (Package Limited)
TC=70oC
TA=25oC
TA=70oC
TC=25oC
TA=25oC
Junction and Storage Temperature Range
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
FET1
FET2
30
±20 ±12
70 135
52 100
57 108
15.3 25
12.4 20
208 400
46.3 73
2.2 2.5
43 72
-55~150
Unit
V
V
A
A
W
mJ
oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient (1)
Thermal Resistance, Junction-to-Case
Symbol
RθJA
RθJC
FET1
Typ. Max
47.5 57
2.2 2.7
FET2
Typ. Max
41.7 50
1.3 1.7
Unit
oC/W
Jan. 2015 Ver. 1.0
1 MagnaChip Semiconductor Ltd.
1 page  
FET2 Electrical Characteristics (Ta =25oC)
Characteristics
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Symbol
BVDSS
VGS(th)
IDSS
IGSS
Drain-Source ON Resistance
RDS(ON)
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Resistance
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
gfs
Qg(10V)
Qg(4.5V)
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Rg
VSD
trr
Qrr
Test Condition
ID = 10mA, VGS = 0V
VDS = VGS, ID = 250μA
VDS = 30V, VGS = 0V
VGS = ±12V, VDS = 0V
VGS = 10V, ID = 20A
TJ=125oC
VGS = 4.5V, ID = 20A
VDS = 5V, ID = 20A
VDS = 15.0V, ID = 20A,
VGS = 10V
VDS = 15.0V, VGS = 0V,
f = 1.0MHz
VGS = 10V VDD=15V,
ID=20A, Rg=3Ω
f=1 MHz
IS = 1.0A, VGS = 0V
IF = 20A, dl/dt = 200A/μs
Note :
1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited.
2. EAS is tested at starting Tj = 25℃, L = 0.1mH, IAS = 25 A, VDD = 27V, VGS = 10V..
Min Typ Max Unit
30 -
-
1.1 1.4 2.2
V
- -1
μA
- - ±0.1
- 1.8 2.5
- 2.3 3.2 mΩ
- 2.4 3.2
- 85 - S
32.8
14.2
-
-
2189
690
48
-
-
-
-
0.5
46.8
20.6
6.8
3.9
3150
1010
71
11.3
12
57.4
7.08
1.0
65
28.8
-
-
4093
1300
92
-
-
-
-
2.0
nC
pF
ns
Ω
-
0.6 1.0
V
- 38 - ns
- 64.4 - nC
Jan. 2015 Ver. 1.0
5 MagnaChip Semiconductor Ltd.
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MDU5693.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MDU5692S | Dual N-Channel MOSFET | MagnaChip |
| MDU5693 | Dual N-Channel MOSFET | MagnaChip |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |