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PDF MDF6N65B Data sheet ( Hoja de datos )
| Número de pieza | MDF6N65B | |
| Descripción | N-Channel Trench MOSFET | |
| Fabricantes | MagnaChip | |
| Logotipo |  |
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MDF6N65B
N-Channel MOSFET 650V, 6.0A, 1.45Ω
General Description
The MDF6N65B use advanced Magnachip’s
MOSFET Technology, which provides low on-state
resistance, high switching performance and
excellent quality.
MDF6N65B is suitable device for SMPS, HID and
general purpose applications.
Features
VDS = 650V
ID = 6.0A
RDS(ON) ≤ 1.45Ω
Applications
Power Supply
PFC
Ballast
@VGS = 10V
@VGS = 10V
TO-220F
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Peak Diode Recovery dv/dt(3)
Repetitive Pulse Avalanche Energy(1)
Avalanche current(1)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
* Id limited by maximum junction temperature
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Symbol
VDSS
VGSS
ID
IDM
PD
dv/dt
EAR
IAR
EAS
TJ, Tstg
Rating
650
±30
6.0*
3.8*
24
39
0.31
4.5
3.9
6.0
200
-55~150
Unit
V
V
A
A
A
W
W/ oC
V/ns
mJ
A
mJ
oC
Symbol
RθJA
RθJC
Rating
62.5
3.2
Unit
oC/W
oC/W
Jul. 2012. Ver. 1.0
1 MagnaChip Semiconductor Ltd.
1 page  
Physical Dimensions
3 Leads, TO-220F
Dimensions are in millimeters unless otherwise specified
Jul. 2012. Ver. 1.0
S y mbol
A
b
b1
C
D
E
e
F
G
L
L1
Q
Q1
￠R
M in
4 .5 0
0 .6 3
1 .1 5
0 .3 3
1 5 .4 7
9 .6 0
2 .3 4
6 .4 8
1 2 .2 4
2 .7 9
2 .5 2
3 .1 0
3 .0 0
Nom
2 .5 4
M ax
4 .9 3
0 .9 1
1 .4 7
0 .6 3
1 6 .1 3
1 0 .7 1
2 .8 4
6 .9 0
1 3 .7 2
3 .6 7
2 .9 6
3 .5 0
3 .5 5
5 MagnaChip Semiconductor Ltd.
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MDF6N65B.PDF ] | |
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