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PDF MDU5593S Data sheet ( Hoja de datos )
| Número de pieza | MDU5593S | |
| Descripción | Dual N-Channel Trench MOSFET | |
| Fabricantes | MagnaChip | |
| Logotipo |  |
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MDU5593S
Dual Asymmetric N-channel Trench MOSFET 30V
General Description
The MDU5593S uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDU5593S is suitable for DC/DC converter and
general purpose applications.
Features
FET1
FET2
VDS = 30V
ID = 34A
VDS = 30V
ID = 40A @VGS = 10V
RDS(ON)
< 8.0mΩ
< 11.0mΩ
< 3.3mΩ @VGS = 10V
< 5.0mΩ @VGS = 4.5V
100% UIL Tested
100% Rg Tested
5
S1/D2
S2
6
S2
S2
7 G2
8
1
2
3
4
D1 3
D1
2
D1
1
G1
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2)
TC=25oC (Silicon Limited)
TC=25oC (Package Limited)
TA=25oC
TC=25oC
TA=25oC
Junction and Storage Temperature Range
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
FET1
FET2
30
±20 ±20
52 95
34 40
13 21
40 100
35.7 44.6
2.2 2.5
60 60
-55~150
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient (1)
Thermal Resistance, Junction-to-Case
Symbol
RθJA
RθJC
FET1
57
3.5
FET2
50
2.8
Unit
V
V
A
A
W
mJ
oC
Unit
oC/W
Feb. 2013 Ver1.0
1 MagnaChip Semiconductor Ltd.
1 page  
FET2 Electrical Characteristics (Ta =25oC)
Characteristics
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Symbol
BVDSS
VGS(th)
IDSS
IGSS
Drain-Source ON Resistance
RDS(ON)
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Resistance
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
gfs
Qg(10V)
Qg(4.5V)
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Rg
VSD
trr
Qrr
Test Condition
ID = 250μA, VGS = 0V
VDS = VGS, ID = 250μA
VDS = 24V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS = 10V, ID = 27A
VGS = 4.5V, ID = 21A
VDS = 5V, ID = 21A
VDS = 15.0V, ID = 20A,
VGS = 10V
VDS = 15.0V, VGS = 0V,
f = 1.0MHz
VDD=15V, ID=20A, Rg=6Ω
f=1 MHz
IS = 1.0A, VGS = 0V
IF = 27A, dl/dt = 150A/μs
Min Typ
30 -
1.0 1.8
--
--
- 2.8
- 4.0
- 46
- 26.1
- 12.6
- 4.5
- 4.2
- 1785
- 652
- 98
- 11.9
- 8.9
- 45.5
- 14.5
- 1.0
- 0.4
- 33.2
- 28.5
Note :
1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited.
2. EAS is tested at starting Tj = 25℃, L = 0.5mH, IAS = 15.5A, VDD = 27V, VGS = 10V. And 100% UIL Test at L = 0.1mH, IAS = 18.0A.
Max
-
3.0
500
±0.1
3.3
5.0
-
-
-
-
-
-
-
-
-
-
-
-
-
0.7
-
-
Unit
V
μA
mΩ
S
nC
pF
ns
Ω
V
ns
nC
Feb. 2013 Ver1.0
5 MagnaChip Semiconductor Ltd.
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MDU5593S.PDF ] | |
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