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PDF MT1911P Data sheet ( Hoja de datos )
| Número de pieza | MT1911P | |
| Descripción | P-Channel MOSFET | |
| Fabricantes | MOS-TECH | |
| Logotipo |  |
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MOS-TECH Semiconductor Co.,LTD
MT1911P
100V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Mos-tech’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
Features
• -9.4A, -100V, RDS(on) = 0.15Ω @VGS = -10 V
• Low gate charge ( typical 21 nC)
• Low Crss ( typical 65 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 100% RG tested
• RoHS Compliant
DD
G S D-PAK
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8! from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθJA
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
©2011 MOS-TECH Semiconductor Corporation
1
G
Ratings
-100
-9.4
-6.0
-37.6
± 20
370
-9.4
5.0
-6.0
2.5
50
0.4
-55 to +150
300
S
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Typ Max Units
-- 2.5 °C/W
-- 50 °C/W
-- 110 °C/W
www.mtsemi.com
1 page  
Gate Charge Test Circuit & Waveform
Same Type
50K%
as DUT
12V 200nF
300nF
VGS
-10V
Qg
VGS
VDS
Qgs Qgd
-3mA
DUT
Charge
Resistive Switching Test Circuit & Waveforms
-10V
VDS
VGS
RG
RL
VDD
DUT
td(on)
VGS 10%
t on
tr
VDS
90%
t off
td(off)
tf
-10V
tp
Unclamped Inductive Switching Test Circuit & Waveforms
L
VDS
EAS = --21-- L IAS2
BVDSS
--------------------
BVDSS - VDD
t p Time
ID
RG
VDD
VDD
ID (t)
VDS (t)
DUT
IAS
BVDSS
MT191P Rev. A 5 www.mtsemi.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet MT1911P.PDF ] | |
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