(PDF) MT6968 Datasheet - N-Channel Power MOSFET / Transistor

Número de pieza	MT6968
Descripción	N-Channel Power MOSFET / Transistor
Fabricantes	MOS-TECH
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No Preview Available ! 茂钿半導體股份有限公司 Mos-TechSemiconductorCo.,LTD. N‐Channel Enhancement Mode Field Effect Transistor MT6968 Common Drain, ESD Protection FEATURES ● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● TSSOP‐8 package NOTE：The MT6968 is available in a lead-free package VDSS 20V PRODUCT SUMMARY ID RDS(ON) (mΩ) Typ 6.5A 18@ VGS=4.5V 23 @ VGS=2.5V ESD Protected: 3000 V ABSOLUTE MAXIMUM RATINGS（TA=25℃ unless otherwise noted） Parameter Drain‐Source Voltage Gate‐Source Voltage Continuous Drain Current A Pulsed Drain Current B Continuous Source Current (Diode Conduction)a Power Dissipation Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG MOSFET 20 ±12 6.5 30 1.5 1.5 ‐55 to 150 Units V V A A A W ℃ THERMAL CHARACTERISTICS Thermal Resistance, Junction‐to Ambientª Rth JA 70 ℃/W ©2008 Mos‐Tech Semiconductor 1 http//www.mtsemi.com 1 page 茂钿半導體股份有限公司 Mos-TechSemiconductorCo.,LTD. MT6968 ©2008 Mos‐Tech Semiconductor 5 http//www.mtsemi.com 5 Page

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PDF MT6968 Data sheet ( Hoja de datos )