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PDF MT5853B Data sheet ( Hoja de datos )
| Número de pieza | MT5853B | |
| Descripción | P-Channel Power MOSFET | |
| Fabricantes | MOS-TECH | |
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茂钿半導體股份有限公司
Mos-TechSemiconductorCo.,LTD.
P‐Channel Enhancement Mode Field Effect Transistor
MT5853%
with Schottky Diode
FEATURES
● Super high dense cell design for low RDS(ON)
● Rugged and reliable
● Simple drive requirement
● DFN3X2‐8L package
NOTE：The MT5853B is available
in a lead-free package
VDSS
‐20V
PRODUCT SUMMARY
ID RDS(ON) (mΩ) Typ
105@ VGS=‐4.5V
‐3.6A
120 @ VGS=‐2.5V
145 @ VGS=‐1.8V
SCHOTTKY
1206-8 ChipFETt
SK
1
A
K
K
A
S
DG
D
Bottom View
Marking Code
JA XX
Lot Traceability
and Date Code
Part # Code
G
D
P-Channel MOSFET
Ordering Information: Si5853DC-T1
ABSOLUTE MAXIMUM RATINGS（TA=25℃ unless otherwise noted）
A
Parameter
Drain‐Source Voltage
Gate‐Source Voltage
Continuous Drain Current A
Pulsed Drain Current B
Schottky reverse voltage
Continuous Forward CurrentA
Pulsed Forward CurrentB
Power Dissipation
Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
VKA
IF
IFM
PD
TJ, TSTG
MOSFET Schottky
‐20
±12
‐3.4
‐15
20
1.9
7
1.7 0.96
‐55 to 150 ‐55 to 150
Units
V
V
A
A
V
A
A
W
℃
THERMAL CHARACTERISTICS MOSFET
Thermal Resistance, Junction‐to Ambientª
Rth JA
75 ℃/W
THERMAL CHARACTERISTICS SCHOTTKY
Thermal Resistance, Junction‐to Ambientª
Rth JA
80 ℃/W
©2008 Mos‐Tech Semiconductor 1 http//www.mtsemi.com
1 page  
茂钿半導體股份有限公司
Mos-TechSemiconductorCo.,LTD.
MT5853B
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
©2008 Mos‐Tech Semiconductor 5 http//www.mtsemi.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet MT5853B.PDF ] | |
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