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PDF MT1803 Data sheet ( Hoja de datos )

Número de pieza MT1803
Descripción N-Channel Power MOSFET / Transistor
Fabricantes MOS-TECH 
Logotipo MOS-TECH Logotipo



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No Preview Available ! MT1803 Hoja de datos, Descripción, Manual

MOS-TECH Semiconductor Co.,LTD
茂鈿半導體股份有限公司
N-Channel Enhancement Mode Field Effect Transistor
MT1803
Features
VDS=30V
ID=60A(Tc=25 , VGS=10V)
RDS(ON) 6.5mΩ @VGS=10V
RDS(ON) 10mΩ @VGS=4.5V
High Density Cell Design for Ultra Low
On-Resistance.
Lead free product is acquired.
Applications
Switching Applications.
Absolute Maximum Ratings (TA = 25 unless otherwise noted)
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
Maximum Power Dissipation 1
Operating Junction and Storage Temperature Range
Tc=25
Tc=25
Thermal Resistance Ratings
Symbol
Parameter
RthJA
Maximum Junction-to-Ambient
Notes:
1. Surface Mounted on 1” x 1” FR4 Board, t 10 Sec.
Rev1.0 Jan-30-2013
Ratings
30
20
60
160
40
50
-55 to 150
Units
V
V
A
A
A
W
Ratings
52
Unit
/W
www.mtsemi.com
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MT1803 pdf
MOS-TECH Semiconductor Co.,LTD
茂鈿半導體股份有限公司
MT1803
Typical Characteristics (Tc=25 unless otherwise noted)
100
TA=25°C
TA=100°C
80
60
TA=150°C
TA=125°C
10
0.000001
0.00001
0.0001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche
capability (Note C)
0.001
40
20
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 13: Power De-rating (Note F)
70
60
50
40
30
20
10
0
25 50 75 100 125 150
TCASE (°C)
Figure 14: Current De-rating (Note F)
175
100000
10000
TA=25°C
1000
100
10
17
5
2
10
1
0.00001 0.001
0.1
10 1000
0
Pulse Width (s) 18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=50°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Rev1.0 Jan-30-2013
www.mtsemi.com
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