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PDF SM1A28NSUB Data sheet ( Hoja de datos )

Número de pieza SM1A28NSUB
Descripción N-Channel Enhancement Mode MOSFET
Fabricantes Sinopower 
Logotipo Sinopower Logotipo



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No Preview Available ! SM1A28NSUB Hoja de datos, Descripción, Manual

SM1A28NSUB
Features
· 100V/17A,
RDS(ON)= 76mW (Max.) @ VGS=10V
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
®
N-Channel Enhancement Mode MOSFET
Pin Description
S
D
G
Top View of TO-251
D
Applications
· Application for Textile Machine.
G
S
N-Channel MOSFET
Ordering and Marking Information
SM1A28NS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
UB : TO-251
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TU : Tube (80ea/tube)
Assembly Material
G : Halogen and Lead Free Device
SM1A28NS UB: SM1A28NS
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - May, 2014
1
www.sinopowersemi.com

1 page




SM1A28NSUB pdf
SM1A28NSUB
®
Typical Operating Characteristics (Cont.)
Output Characteristics
30
VGS=6,7,8,9,10V
25
5.5V
20
15
10 5V
5
4.5V
0
0123456
VDS - Drain - Source Voltage (V)
Drain-Source On Resistance
150
125
100
75 VGS=10V
50
25
0
0 5 10 15 20 25
ID- Drain Current (A)
Gate-Source On Resistance
200
I =10A
DS
180
160
140
120
100
80
60
40
3 4 5 6 7 8 9 10
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.6
IDS=250mA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - May, 2014
5
www.sinopowersemi.com

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