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PDF SM2202NSQE Data sheet ( Hoja de datos )
| Número de pieza | SM2202NSQE | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | Sinopower | |
| Logotipo |  |
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SM2202NSQE
Features
• 30V/8.4A,
RDS(ON) = 15.5mΩ(max.) @ VGS =10V
RDS(ON) = 21mΩ(max.) @ VGS =4.5V
• Avalanche Rated
• Reliable and Rugged
• Lead Free and Green Devices Available
(RoHS Compliant)
• 100% UIS Tested
®
N-Channel Enhancement Mode MOSFET
Pin Description
DDS
D
G
D
D
S
TDFN2x2-6
(1,2,5,6)
DD DD
Pin 1
Applications
• Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
(3)G
(4)S
N-Channel MOSFET
Ordering and Marking Information
SM2202NS
SM2202NS QE :
Assembly Material
Handling Code
Temperature Range
Package Code
2202M
XXXXX
Package Code
QE : TDFN2x2-6
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (3000ea/reel)
Assembly Material
G : Halogen and Lead Free Device
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.4 - November, 2014
1
www.sinopowersemi.com
1 page  
SM2202NSQE
Typical Operating Characteristics (Cont.)
®
Output Characteristics
32
V =4,4.5,5,6,7,8,9,10V
GS
28
3.5V
24
20
16
12
3V
8
4
2.5V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-Source Voltage (V)
Gate-Source On Resistance
40
I =8A
DS
35
30
25
20
15
10
5
2 3 4 5 6 7 8 9 10
V - Gate - Source Voltage (V)
GS
Drain-Source On Resistance
32
28
24
20 V =4.5V
GS
16
V =10V
GS
12
8
4
0 8 16 24 32
ID - Drain Current (A)
Gate Threshold Voltage
1.6
I
DS
=250µA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
T - Junction Temperature (°C)
j
Copyright © Sinopower Semiconductor, Inc.
Rev. A.4 - November, 2014
5
www.sinopowersemi.com
5 Page 
SM2202NSQE
Taping Direction Information
TDFN2x2-6
USER DIRECTION OF FEED
®
Classification Profile
Copyright © Sinopower Semiconductor, Inc.
Rev. A.4 - November, 2014
11
www.sinopowersemi.com
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet SM2202NSQE.PDF ] | |
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