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PDF SM1C01NSFH Data sheet ( Hoja de datos )
| Número de pieza | SM1C01NSFH | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | Sinopower | |
| Logotipo |  |
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SM1C01NSFH
®
N-Channel Enhancement Mode MOSFET
Features
· 120V/120A,
RDS(ON)= 8.4mW(max.) @ VGS= 10V
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
Applications
· Synchronous Rectification.
· Power Management in Inverter Systems.
· Motor Driver.
Pin Description
GDS
Top View of TO-220H
D (2)
G(1)
S (3)
N-Channel MOSFET
Ordering and Marking Information
SM1C01NS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
FH : TO-220H
Operating Junction Temperature Range
C : -55 to 175 oC
Handling Code
TU : Tube (50ea/tube)
Assembly Material
G : Halogen and Lead Free Device
SM1C01NS FH : SM1C01N
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - January, 2014
1
www.sinopowersemi.com
1 page  
SM1C01NSFH
Typical Operating Characteristics (Cont.)
®
Output Characteristics
210
V =5.5,6,7,8,9,10V
GS
180 5V
150
120
90
4.5V
60
30
4V
0
012345
VDS - Drain - Source Voltage (V)
Gate-Source On Resistance
30
IDS=40A
25
20
15
10
5
0
3 4 5 6 7 8 9 10
VGS - Gate - Source Voltage (V)
Drain-Source On Resistance
14
12
10
8 VGS=10V
6
4
2
0
0 40 80 120 160 200
ID- Drain Current (A)
Gate Threshold Voltage
1.6
IDS =250mA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - January, 2014
5
www.sinopowersemi.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SM1C01NSFH.PDF ] | |
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