|
|
PDF SM6019NSF Data sheet ( Hoja de datos )
| Número de pieza | SM6019NSF | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | Sinopower | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de SM6019NSF (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
SM6019NSF
®
N-Channel Enhancement Mode MOSFET
Features
· 60V/60A,
RDS(ON)=11.5mW (max.) @ VGS=10V
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
Applications
Pin Description
GDS
Top View of TO-220
D
· Synchronous Rectification.
· Power Management in Inverter Systems.
G
Ordering and Marking Information
S
N-Channel MOSFET
SM6019NS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
F : TO-220
Operating Junction Temperature Range
C : -55 to 175 oC
Handling Code
TU : Tube (50ea/tube)
Assembly Material
G : Halogen and Lead Free Device
SM6019NS F : SM6019N
XXXXX
XXXXX - Lot Code
Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - January, 2014
1
www.sinopowersemi.com
1 page  
SM6019NSF
®
Typical Operating Characteristics (Cont.)
Output Characteristics
160
VGS=9,10V
140
8V
120
100
80
7V
60
40 6.5V
20 6V
5V
0
012345
VDS - Drain - Source Voltage (V)
Drain-Source On Resistance
20
18
16
14
12 VGS=10V
10
8
6
4
2
0 40 80 120 160
ID- Drain Current (A)
Gate-Source On Resistance
60
IDS=30A
50
40
30
20
10
0
5 6 7 8 9 10
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.6
IDS=250mA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150 175
Tj - Junction Temperature (°C)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - January, 2014
5
www.sinopowersemi.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SM6019NSF.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SM6019NSF | N-Channel Enhancement Mode MOSFET | Sinopower |
| SM6019NSU | N-Channel Enhancement Mode MOSFET | Sinopower |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |