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PDF SM1102PSF Data sheet ( Hoja de datos )
| Número de pieza | SM1102PSF | |
| Descripción | P-Channel Enhancement Mode MOSFET | |
| Fabricantes | Sinopower | |
| Logotipo |  |
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SM1102PSF
Features
· -100V/-27A,
RDS(ON)= 42mW (Max.) @ VGS=-10V
RDS(ON)= 52mW (Max.) @ VGS=-4.5V
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
®
P-Channel Enhancement Mode MOSFET
Pin Description
GDS
Top View of TO-220
S
Applications
· Power Management in DC/DC Converters and
Battery Powered System
G
D
P-Channel MOSFET
Ordering and Marking Information
SM1102PS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
F : TO-220
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TU : Tube (50ea/tube)
Assembly Material
G : Halogen and Lead Free Device
SM1102PS F : SM1102P
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - May, 2014
1
www.sinopowersemi.com
1 page  
SM1102PSF
Typical Operating Characteristics (Cont.)
®
Output Characteristics
60
VGS= -4.5,-5,-,6,-7,-8,-9,-10V
50
-4V
40
30
20 -3.5V
10
-3V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
-VDS - Drain - Source Voltage (V)
Drain-Source On Resistance
55
50
45 VGS=4.5V
40
35 VGS=10V
30
25
20
0 10 20 30 40 50 60
-ID - Drain Current (A)
Gate-Source On Resistance
80
IDS=-20A
70
60
50
40
30
20
2 3 4 5 6 7 8 9 10
-VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.6
IDS= -250mA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - May, 2014
5
www.sinopowersemi.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SM1102PSF.PDF ] | |
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