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PDF SM6102PSF Data sheet ( Hoja de datos )
| Número de pieza | SM6102PSF | |
| Descripción | P-Channel Enhancement Mode MOSFET | |
| Fabricantes | Sinopower | |
| Logotipo |  |
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SM6102PSF
®
P-Channel Enhancement Mode MOSFET
Features
· -60V/-72.5A,
RDS(ON)= 12.5mW(max.) @ VGS=-10V
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
· 100% UIS Tested
Applications
· Power Management in Desktop Computer or
DC/ DC Converters
Pin Description
GDS
Top View of TO-220
D
G
S
P-Channel MOSFET
Ordering and Marking Information
SM6102PS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
F : TO-220
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TU : Tube (50ea/Tube)
Assembly Material
G : Halogen and Lead Free Device
SM6102PS F : SM6102P
XXXXX
XXXXX - Lot Code
Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - November, 2013
1
www.sinopowersemi.com
1 page  
SM6102PSF
Typical Operating Characteristics (Cont.)
®
Output Characteristics
140
120 VGS=4.5,5,6,7,8,9,10V
100 4V
80
60
40 3.5V
20
3V
0
012345
-VDS - Drain-Source Voltage (V)
Drain-Source On Resistance
16
14
12
V =-10V
GS
10
8
6
4
0 20 40 60 80 100 120 140
-ID - Drain Current (A)
Gate-Source On Resistance
35
IDS=-25A
30
25
20
15
10
5
2 3 4 5 6 7 8 9 10
-VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.6
IDS =250mA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - November, 2013
5
www.sinopowersemi.com
5 Page 
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet SM6102PSF.PDF ] | |
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