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PDF SM1C02NSF Data sheet ( Hoja de datos )
| Número de pieza | SM1C02NSF | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | Sinopower | |
| Logotipo |  |
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SM1C02NSF
®
N-Channel Enhancement Mode MOSFET
Features
• 120V/50A,
R=
DS(ON)
22mΩ(max.)
@
V=
GS
10V
• Reliable and Rugged
• Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
S
D
G
Top View of TO-220
Applications
• High Efficiency Synchronous Rectification in
SMPS.
• Uninterruptible Power Supply.
• Hard Switched and High Frequency Circuits.
D (2)
G(1)
S (3)
N-Channel MOSFET
Ordering and Marking Information
SM1C02NS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
F : TO-220
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TU : Tube (50ea/tube)
Assembly Material
G : Halogen and Lead Free Device
SM1C02NS F : SM1C02N
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.2 - August, 2014
1
www.sinopowersemi.com
1 page  
SM1C02NSF
Typical Operating Characteristics (Cont.)
®
Output Characteristics
100
V =5.5,6,7,8,9,10V
GS
80
5V
60
40
4.5V
20
4V
0
0123456
VDS - Drain - Source Voltage (V)
Gate-Source On Resistance
60
I =25A
DS
50
40
30
20
10
3 4 5 6 7 8 9 10
VGS - Gate - Source Voltage (V)
Drain-Source On Resistance
40
32
24
V =10V
GS
16
8
0
0 10 20 30 40 50 60 70
ID- Drain Current (A)
Gate Threshold Voltage
1.6
IDS=250µA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright © Sinopower Semiconductor, Inc.
Rev. A.2 - August, 2014
5
www.sinopowersemi.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SM1C02NSF.PDF ] | |
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