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PDF APM4430 Data sheet ( Hoja de datos )
| Número de pieza | APM4430 | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | Anpec Electronics Coropration | |
| Logotipo |  |
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APM4430
N-Channel Enhancement Mode MOSFET
Features
•
30V/23A
,
RDS(ON)=4.5mΩ(typ.)
@
V =10V
GS
RDS(ON)=7mΩ(typ.)
@
V =5V
GS
• Super High Dense Cell Design for Extremely
Low RDS(ON)
• Reliable and Rugged
• SO-8 Package
Applications
• Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems .
Ordering and Marking Information
Pin Description
54
63
72
81
SO − 8
APM 4430
APM4430 K :
H a n d lin g C o d e
Temp. Range
Package Code
APM 4430
XXXXX
Package Code
K : SO -8
O perating Junction Tem p. R ange
C : -55 to 150°C
H andling C ode
TU : Tube
TR : Tape & Reel
XXX XX - D ate Code
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Maximum Drain Current – Continuous
IDM Maximum Drain Current – Pulsed
Rating
30
±20
23
± 60
Unit
V
A
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2001
1
www.anpec.com.tw
1 page  
APM4430
Typical Characteristics
Capacitance
7000
6000
5000
Ciss
4000
3000
2000
1000
0
0
Coss
Crss
5 10 15 20 25 30
VDS-Drain-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
70
TJ=150°C
10
TJ=25°C
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VDS-Source-to-Drain Voltage (V )
60
50
40
30
20
10
0
10-2
Single Pulse Power
10-1 100 101
Time (sec)
102
Safe Operation Area
100
ID M
ID
10
1
10us
100us
1ms
10ms
100ms
0.1
VG S=10V
Single Pulse
DC
TC=25°C
0.01
0.01 0.1 1 10 100
VDS-Drain-to-Source Voltage (V)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2001
5
www.anpec.com.tw
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet APM4430.PDF ] | |
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