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Número de pieza | SM3320NSQA | |
Descripción | N-Channel Enhancement Mode MOSFET | |
Fabricantes | Sinopower | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SM3320NSQA (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
No Preview Available ! SM3320NSQA/SM3320NSQG
®
N-Channel Enhancement Mode MOSFET
Features
• 30V/49A,
RDS(ON) = 7.8mΩ(max.) @ VGS =10V
RDS(ON) = 12.3mΩ(max.) @ VGS =4.5V
• Integrated Schottky Diode
• Avalanche Rated
• Reliable and Rugged
• Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
Top View Bottom View
DDDD
Top View Bottom View
DDDD
SSSG
DFN3x3-8(punch type)
SSSG
DFN3x3-8(saw type)
(5,6,7,8)
DD DD
Applications
(4) G
• Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
Ordering and Marking Information
S SS
( 1, 2, 3 )
N-Channel MOSFET
SM3320NS
Assembly Material
Handling Code
Temperature Range
Package Code
SM
SM3320NS QA/QG : 3320
XXXXX
Package Code
QA : DFN3x3-8 (punch type)
QG : DFN3x3-8 (saw type)
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (3000ea/reel)
Assembly Material
G : Halogen and Lead Free Device
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.4 - August, 2014
1
www.sinopowersemi.com
1 page SM3320NSQA/SM3320NSQG
Typical Operating Characteristics (Cont.)
®
Output Characteristics
50
V =5,6,7,8,9,10V
GS
4V
40
3.8V
30
20 3.5V
3.2V
10
3V
2.5V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-Source Voltage (V)
Gate-Source On Resistance
30
I =13A
DS
25
20
15
10
5
0
2 3 4 5 6 7 8 9 10
V - Gate - Source Voltage (V)
GS
Drain-Source On Resistance
16
14
12
V =4.5V
GS
10
8
V =10V
GS
6
4
2
0 8 16 24 32 40
ID - Drain Current (A)
Gate Threshold Voltage
1.6
IDS=250µA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
T - Junction Temperature (°C)
j
Copyright © Sinopower Semiconductor, Inc.
Rev. A.4 - August, 2014
5
www.sinopowersemi.com
5 Page SM3320NSQA/SM3320NSQG
Carrier Tape & Reel Dimensions
OD0
P0 P2
P1
A
®
K0
SECTION A-A
A0
B
OD1 B
SECTION B-B
A
d
T1
Application A
H
178.0±2.00 50 MIN.
D FN 3x3-8
(punch type)
P0
P1
4.0±0.10 8.0±0.10
T1 C
d
8.4+2.00
-0.00
13.0+0.50
-0.20
1.5 MIN.
P2 D0 D1
2.0±0.05
1.5+0.10
-0.00
1.5 MIN.
D W E1 F
20.2 MIN. 8.0±0.20 1.75±0.10 3.5±0.05
T A0 B0 K0
0.6+0.00 3.35±0.20 3.35±0.20 1.30±0.20
-0.40
(mm)
Application A H T1 C d D W E1 F
330.0±2.00 177 MIN.
D FN 3x3-8
(saw type)
P0
4.0±0.10
P1
8.0±0.10
12.4+2.00 13.0+0.50
-0.00
-0.20
P2 D0
2.0±0.05
1.5+0.10
-0.00
1.5 MIN.
D1
1.5 MIN.
21.0±0.50
12.0+0.30
-0.10
1.75±0.10
T A0 B0
5.5±0.05
K0
0.23±0.05 3.23±0.10 3.23±0.10 1.05±0.10
(mm)
Copyright © Sinopower Semiconductor, Inc.
Rev. A.4 - August, 2014
11
www.sinopowersemi.com
11 Page |
Páginas | Total 13 Páginas | |
PDF Descargar | [ Datasheet SM3320NSQA.PDF ] |
Número de pieza | Descripción | Fabricantes |
SM3320NSQA | N-Channel Enhancement Mode MOSFET | Sinopower |
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