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PDF SQ3418AEEV Data sheet ( Hoja de datos )
| Número de pieza | SQ3418AEEV | |
| Descripción | Automotive N-Channel MOSFET | |
| Fabricantes | Vishay | |
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SQ3418AEEV
Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = 10 V
RDS(on) () at VGS = 4.5 V
ID (A)
Configuration
Package
TSOP-6 Single
S
4
D
5
D
6
40
0.032
0.042
8
Single
TSOP-6
FEATURES
• TrenchFET® power MOSFET
• Typical ESD protection 800 V
• AEC-Q101 qualified d
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
(1, 2, 5, 6) D
(3) G
Marking Code: 8M
1
D
Top View
2
D
3
G
N-Channel MOSFET
(4) S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
Pulsed Drain Current b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation b
Operating Junction and Storage Temperature Range
TC = 25 °C a
TC = 125 °C
L = 0.1 mH
TC = 25 °C
TC = 125 °C
VDS
VGS
ID
IS
IDM
IAS
EAS
PD
TJ, Tstg
LIMIT
40
± 20
8
5
4
32
11
6
5
1.6
-55 to +175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Parametric verification ongoing.
PCB Mount c
SYMBOL
RthJA
RthJF
LIMIT
110
30
UNIT
°C/W
S15-2572-Rev. A, 02-Nov-15
1
Document Number: 62975
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
Axis Title
100
IDM limited
Limited by RDS(on) (1)
10
1
10000
10 μs
1000
100 μs
1 ms
10 ms100
0.1 100 ms, 1 s, 10 s, DC
BVDSS limited
TC = 25 °C
Single pulse
0.01 10
0.01 0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
(1) VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
SQ3418AEEV
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 110 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100 1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
S15-2572-Rev. A, 02-Nov-15
5
Document Number: 62975
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SQ3418AEEV.PDF ] | |
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