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PDF SIHH14N60EF Data sheet ( Hoja de datos )
| Número de pieza | SIHH14N60EF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
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SiHH14N60EF
Vishay Siliconix
E Series Power MOSFET with Fast Body Diode
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) typ. () at 25 °C
Qg max. (nC)
Qgs (nC)
Qgd (nC)
Configuration
650
VGS = 10 V
84
9
17
Single
0.231
PowerPAK® 8 x 8
Pin 4
4
1
2
3
3
Pin 1
Pin 2
Pin 3
N-Channel MOSFET
FEATURES
• Completely lead (Pb)-free device
• Low figure-of-merit (FOM) Ron x Qg
• Low input capacitance (Ciss)
• Reduced switching and conduction losses
• Ultra low gate charge (Qg)
• Avalanche energy rated (UIS)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
• Industrial
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Renewable energy
- Solar (PV inverters)
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
PowerPAK 8 x 8
SiHH14N60EF-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current a
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energy b
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dt c
TJ = 125 °C
EAS
PD
TJ, Tstg
dV/dt
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 3.5 A.
c. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
LIMIT
600
± 30
15
9
38
1.2
173
147
-55 to +150
70
21
UNIT
V
A
W/°C
mJ
W
°C
V/ns
S16-0531-Rev. B, 28-Mar-16
1
Document Number: 91778
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
SiHH14N60EF
Vishay Siliconix
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.000001
Single Pulse
0.00001
0.0001
0.001
Pulse Time (s)
0.01
Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case
0.1
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.001
Single Pulse
1
0.0001
0.0001
0.001
0.01
0.1 1
Pulse Time (s)
10
Fig. 13 - Normalized Thermal Transient Impedance, Junction-to-Ambient
100
VDS
VGS
RG
RD
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- VDD
VDS
Vary tp to obtain
required IAS
RG
10 V
tp
L
D.U.T
IAS
0.01 Ω
1000
+
- VDD
Fig. 14 - Switching Time Test Circuit
VDS
90 %
Fig. 16 - Unclamped Inductive Test Circuit
VDS
tp
VDD
10 %
VGS
td(on) tr
td(off) tf
Fig. 15 - Switching Time Waveforms
VDS
IAS
Fig. 17 - Unclamped Inductive Waveforms
S16-0531-Rev. B, 28-Mar-16
5
Document Number: 91778
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SIHH14N60EF.PDF ] | |
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