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PDF SiHG44N65EF Data sheet ( Hoja de datos )
| Número de pieza | SiHG44N65EF | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
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SiHG44N65EF
Vishay Siliconix
E Series Power MOSFET with Fast Body Diode
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) typ. () at 25 °C
Qg max. (nC)
Qgs (nC)
Qgd (nC)
Configuration
700
VGS = 10 V
278
46
76
Single
TO-247AC
0.063
D
S
D
G
G
S
N-Channel MOSFET
FEATURES
• Fast body diode MOSFET using E series
technology
• Reduced trr, Qrr, and IRRM
• Low figure-of-merit (FOM): Ron x Qg
• Low input capacitance (Ciss)
• Low switching losses due to reduced Qrr
• Ultra low gate charge (Qg)
• Avalanche energy rated (UIS)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Telecommunications
- Server and telecom power supplies
• Lighting
- High intensity discharge (HID)
- Light emitting diodes (LEDs)
• Consumer and computing
- ATX power supplies
• Industrial
- Welding
- Battery chargers
• Renewable energy
- Solar (PV inverters)
• Switch mode power supplies (SMPS)
• Applications using the following topologies
- LLC
- Phase shifted bridge (ZVS)
- 3-level inverter
- AC/DC bridge
ORDERING INFORMATION
Package
Lead (Pb)-Free and Halogen-Free
TO-247AC
SiHG44N65EF-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current a
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energy b
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dt d
TJ = 125 °C
EAS
PD
TJ, Tstg
dV/dt
Soldering Recommendations (Peak Temperature) c
for 10 s
LIMIT
650
± 30
46
29
154
3.3
596
417
-55 to +150
70
5.3
300
UNIT
V
A
W/°C
mJ
W
°C
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 140 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 6.5 A.
c. 1.6 mm from case.
d. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
S16-0524-Rev. A, 21-Mar-16
1
Document Number: 91792
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
1
Duty cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single pulse
SiHG44N65EF
Vishay Siliconix
0.01
0.0001
0.001
0.01
0.1
Pulse Time (s)
Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case
1
VDS
VGS
RG
RD
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- VDD
Fig. 13 - Switching Time Test Circuit
VDS
VDS
tp
VDD
IAS
Fig. 16 - Unclamped Inductive Waveforms
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 14 - Switching Time Waveforms
10 V
QGS
VG
QG
QGD
Charge
Fig. 17 - Basic Gate Charge Waveform
VDS
Vary tp to obtain
required IAS
RG
10 V
tp
L
D.U.T
IAS
0.01 Ω
+
- VDD
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
VGS
3 mA
+
D.U.T. - VDS
Fig. 15 - Unclamped Inductive Test Circuit
IG ID
Current sampling resistors
Fig. 18 - Gate Charge Test Circuit
S16-0524-Rev. A, 21-Mar-16
5
Document Number: 91792
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SiHG44N65EF.PDF ] | |
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