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PDF SIHG47N60EF Data sheet ( Hoja de datos )
| Número de pieza | SIHG47N60EF | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
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SiHG47N60EF
Vishay Siliconix
EF Series Power MOSFET with Fast Body Diode
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) max. at 25 °C ()
Qg max. (nC)
Qgs (nC)
Qgd (nC)
Configuration
650
VGS = 10 V
228
32
62
Single
0.065
TO-247AC
D
G
S
D
G
S
N-Channel MOSFET
FEATURES
• Fast body diode MOSFET using E series
technology
• Reduced trr, Qrr, and IRRM
• Low figure-of-merit (FOM) Ron x Qg
• Low input capacitance (Ciss)
• Increased robustness due to low Qrr
• Ultra low gate charge (Qg)
• Avalanche energy rated (UIS)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Telecommunications
- Server and telecom power supplies
• Lighting
- High-intensity lighting (HID)
- Light emitting diodes (LEDs)
• Consumer and computing
- ATX power supplies
• Industrial
- Welding
- Battery chargers
• Renewable energy
- Solar (PV inverters)
• Switching mode power supplies (SMPS)
• Applications using the following topologies
- LLC
- Phase shifted bridge (ZVS)
- 3-level inverter
- AC/DC bridge
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
TO-247AC
SiHG47N60EF-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current a
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VGS
ID
IDM
Single Pulse Avalanche Energy b
EAS
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dt d
TJ = 125 °C
PD
TJ, Tstg
dV/dt
Soldering Recommendations (Peak Temperature) c
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 73.5 mH, Rg = 25 , IAS = 6.4 A.
c. 1.6 mm from case.
d. ISD ID, dI/dt = 500 A/μs, starting TJ = 25 °C.
LIMIT
600
± 30
47
29
138
3
1500
379
-55 to +150
70
50
300
UNIT
V
A
W/°C
mJ
W
°C
V/ns
°C
S17-0298-Rev. H, 27-Feb-17
1
Document Number: 91559
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
SiHG47N60EF
Vishay Siliconix
Single Pulse
0.01
0.0001
0.001
0.01
0.1
Pulse Time (s)
Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case
1
VDS
VGS
RG
RD
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- VDD
Fig. 13 - Switching Time Test Circuit
VDS
VDS
tp
VDD
IAS
Fig. 16 - Unclamped Inductive Waveforms
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 14 - Switching Time Waveforms
10 V
QGS
VG
QG
QGD
Charge
Fig. 17 - Basic Gate Charge Waveform
VDS
Vary tp to obtain
required IAS
RG
10 V
tp
L
D.U.T
IAS
0.01 Ω
+
- VDD
Fig. 15 - Unclamped Inductive Test Circuit
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - VDS
VGS
3 mA
IG ID
Current sampling resistors
Fig. 18 - Gate Charge Test Circuit
S17-0298-Rev. H, 27-Feb-17
5
Document Number: 91559
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SIHG47N60EF.PDF ] | |
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