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PDF SIHD12N50E Data sheet ( Hoja de datos )
| Número de pieza | SIHD12N50E | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
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SiHD12N50E
Vishay Siliconix
E Series Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) max. at 25 °C (Ω)
Qg max. (nC)
Qgs (nC)
Qgd (nC)
Configuration
550
VGS = 10 V
50
6
10
Single
0.380
DPAK
(TO-252)
D
GS
D
G
S
N-Channel MOSFET
FEATURES
• Low figure-of-merit (FOM) Ron x Qg
• Low input capacitance (Ciss)
• Reduced switching and conduction losses
• Low gate charge (Qg)
• Avalanche energy rated (UIS)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Computing
- PC silver box / ATX power supplies
• Lighting
- Two stage LED lighting
• Consumer electronics
• Applications using hard switched topologies
- Power factor correction (PFC)
- Two switch forward converter
- Flyback converter
• Switch mode power supplies (SMPS)
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
DPAK (TO-252)
SiHD12N50E-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current a
VGS at 10 V
TC = 25 °C
TC = 100 °C
Linear Derating Factor
Single Pulse Avalanche Energy b
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dt d
VDS = 0 V to 80 % VDS
Soldering Recommendations (Peak Temperature) c
for 10 s
VDS
VGS
ID
IDM
EAS
PD
TJ, Tstg
dV/dt
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 2.7 A.
c. 1.6 mm from case.
d. ISD ≤ ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
LIMIT
500
± 30
10.5
6.6
21
0.91
103
114
-55 to +150
70
27
300
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
RthJA
RthJC
TYP.
-
-
MAX.
62
1.1
UNIT
V
A
W/°C
mJ
W
°C
V/ns
°C
UNIT
°C/W
S15-0278-Rev. B, 23-Feb-15
1
Document Number: 91636
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
Single Pulse
SiHD12N50E
Vishay Siliconix
0.01
0.0001
0.001
0.01
Pulse Time (s)
0.1
Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case
1
VDS
VGS
RG
RD
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- VDD
Fig. 13 - Switching Time Test Circuit
VDS
VDS
tp
VDD
IAS
Fig. 16 - Unclamped Inductive Waveforms
VDS
90 %
10 V
QGS
QG
QGD
10 %
VGS
td(on) tr
td(off) tf
Fig. 14 - Switching Time Waveforms
VG
Charge
Fig. 17 - Basic Gate Charge Waveform
VDS
Vary tp to obtain
required IAS
RG
10 V
tp
L
D.U.T
IAS
0.01 Ω
+
- VDD
Fig. 15 - Unclamped Inductive Test Circuit
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - VDS
VGS
3 mA
IG ID
Current sampling resistors
Fig. 18 - Gate Charge Test Circuit
S15-0278-Rev. B, 23-Feb-15
5
Document Number: 91636
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SIHD12N50E.PDF ] | |
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